Permanent optical doping of amorphous metal oxide semiconductors by deep ultraviolet irradiation at room temperature

2010 ◽  
Vol 96 (22) ◽  
pp. 222101 ◽  
Author(s):  
Hyungtak Seo ◽  
Young-Je Cho ◽  
Jinwoo Kim ◽  
Santosh M.bobade ◽  
Kyoung-Youn Park ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Ultraviolet Irradiation ◽  
Room Temperature ◽  
Amorphous Metal ◽  
Metal Oxide Semiconductors ◽  
Oxide Semiconductors ◽  
Deep Ultraviolet ◽  
Amorphous Metal Oxide

scholarly journals Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices

2016 ◽  
Vol 26 (17) ◽  
pp. 2820-2825 ◽  
Author(s):  
Pushpa Raj Pudasaini ◽  
Joo Hyon Noh ◽  
Anthony T. Wong ◽  
Olga S. Ovchinnikova ◽  
Amanda V. Haglund ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Metal Oxide ◽  
Electronic Devices ◽  
Amorphous Metal ◽  
Metal Oxide Semiconductors ◽  
Oxide Semiconductors ◽  
Amorphous Metal Oxide

scholarly journals Field‐Driven Athermal Activation of Amorphous Metal Oxide Semiconductors for Flexible Programmable Logic Circuits and Neuromorphic Electronics

Small ◽  
2019 ◽  
Vol 15 (27) ◽  
pp. 1901457 ◽  
Author(s):  
Mohit Rameshchandra Kulkarni ◽  
Rohit Abraham John ◽  
Nidhi Tiwari ◽  
Amoolya Nirmal ◽  
Si En Ng ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Logic Circuits ◽  
Amorphous Metal ◽  
Metal Oxide Semiconductors ◽  
Programmable Logic ◽  
Oxide Semiconductors ◽  
Amorphous Metal Oxide

scholarly journals Scalable High-Speed Hybrid Complementary Integrated Circuits based on Solution-Processed Organic and Amorphous Metal Oxide Semiconductors

2021 ◽  
Author(s):  
Shun Watanabe ◽  
Xiaozhu Wei ◽  
Shohei Kumagai ◽  
Tatsuyuki Makita ◽  
Kotaro Tsuzuku ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Metal Oxide ◽  
High Speed ◽  
High Mobility ◽  
Amorphous Metal ◽  
Metal Oxide Semiconductors ◽  
Ring Oscillators ◽  
Solution Processed ◽  
Oxide Semiconductors ◽  
Amorphous Metal Oxide

Abstract Solution-processed single-crystal organic semiconductors (OSCs) and amorphous metal oxide semiconductors (MOSs) are promising for high-mobility, p- and n-channel thin-film transistors (TFTs), respectively. Organic−inorganic hybrid complementary circuits hence have great potential to satisfy practical requirements; however, some chemical incompatibilities between OSCs and MOSs, such as heat and chemical resistance, conventionally make it difficult to rationally integrate TFTs based on solution-processed OSC and MOS into the same substrates. In this work, we achieved a rational integration method based on the solution-processed semiconductors by carefully managing the device configuration and the deposition and patterning techniques from materials point of view. The balanced high performances as well as the uniform fabrication of the TFTs led to densely integrated five-stage ring oscillators with the stage propagation delay of 1.3 µs, which is the fastest operation among ever reported complementary ring oscillators based on solution-processed semiconductors.

scholarly journals Highly mobile and reactive state of hydrogen in metal oxide semiconductors at room temperature

2013 ◽  
Vol 3 (1) ◽  
Author(s):  
Wan Ping Chen ◽  
Ke Feng He ◽  
Yu Wang ◽  
Helen Lai Wah Chan ◽  
Zijie Yan
Keyword(s):  
Metal Oxide ◽  
Room Temperature ◽  
Metal Oxide Semiconductors ◽  
Oxide Semiconductors

scholarly journals Graphene-enhanced metal oxide gas sensors at room temperature: a review

2018 ◽  
Vol 9 ◽  
pp. 2832-2844 ◽  
Author(s):  
Dongjin Sun ◽  
Yifan Luo ◽  
Marc Debliquy ◽  
Chao Zhang
Keyword(s):  
Metal Oxide ◽  
Gas Sensors ◽  
Room Temperature ◽  
Gas Sensing ◽  
Metal Oxide Semiconductors ◽  
Oxide Semiconductors ◽  
Sensing Material ◽  
Metal Oxide Gas Sensors ◽  
Low Sensitivity ◽  
Sensing Performance

Owing to the excellent sensitivity to gases, metal-oxide semiconductors (MOS) are widely used as materials for gas sensing. Usually, MOS gas sensors have some common shortages, such as relatively poor selectivity and high operating temperature. Graphene has drawn much attention as a gas sensing material in recent years because it can even work at room temperature, which reduces power consumption. However, the low sensitivity and long recovery time of the graphene-based sensors limit its further development. The combination of metal-oxide semiconductors and graphene may significantly improve the sensing performance, especially the selectivity and response/recovery rate at room temperature. In this review, we have summarized the latest progress of graphene/metal-oxide gas sensors for the detection of NO2, NH3, CO and some volatile organic compounds (VOCs) at room temperature. Meanwhile, the sensing performance and sensing mechanism of the sensors are discussed. The improved experimental schemes are raised and the critical research directions of graphene/metal-oxide sensors in the future are proposed.

scholarly journals Room-temperature ppb-level trimethylamine gas sensors functionalized with citric acid-doped polyvinyl acetate nanofibrous mats

2021 ◽  
Author(s):  
Aditya Rianjanu ◽  
Rizky Aflaha ◽  
Nur Istiqomah Khamidy ◽  
Mitra Djamal ◽  
Kuwat Triyana ◽  
...  
Keyword(s):  
Elevated Temperature ◽  
Citric Acid ◽  
Metal Oxide ◽  
Chemical Reaction ◽  
Gas Sensors ◽  
Room Temperature ◽  
Polyvinyl Acetate ◽  
Metal Oxide Semiconductors ◽  
Oxide Semiconductors ◽  
Gas Molecules

Conventional chemoresistive gas sensors based on inorganic metal oxide semiconductors work typically at an elevated temperature (200 – 500 °C) to facilitate the chemical reaction between the target gas molecules...

Sign in / Sign up

Export Citation Format

Share Document