scholarly journals Ionic Liquid Activation of Amorphous Metal-Oxide Semiconductors for Flexible Transparent Electronic Devices

2016 ◽  
Vol 26 (17) ◽  
pp. 2820-2825 ◽  
Author(s):  
Pushpa Raj Pudasaini ◽  
Joo Hyon Noh ◽  
Anthony T. Wong ◽  
Olga S. Ovchinnikova ◽  
Amanda V. Haglund ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Metal Oxide ◽  
Electronic Devices ◽  
Amorphous Metal ◽  
Metal Oxide Semiconductors ◽  
Oxide Semiconductors ◽  
Amorphous Metal Oxide

Permanent optical doping of amorphous metal oxide semiconductors by deep ultraviolet irradiation at room temperature

2010 ◽  
Vol 96 (22) ◽  
pp. 222101 ◽  
Author(s):  
Hyungtak Seo ◽  
Young-Je Cho ◽  
Jinwoo Kim ◽  
Santosh M.bobade ◽  
Kyoung-Youn Park ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Ultraviolet Irradiation ◽  
Room Temperature ◽  
Amorphous Metal ◽  
Metal Oxide Semiconductors ◽  
Oxide Semiconductors ◽  
Deep Ultraviolet ◽  
Amorphous Metal Oxide

scholarly journals Field‐Driven Athermal Activation of Amorphous Metal Oxide Semiconductors for Flexible Programmable Logic Circuits and Neuromorphic Electronics

Small ◽  
2019 ◽  
Vol 15 (27) ◽  
pp. 1901457 ◽  
Author(s):  
Mohit Rameshchandra Kulkarni ◽  
Rohit Abraham John ◽  
Nidhi Tiwari ◽  
Amoolya Nirmal ◽  
Si En Ng ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Logic Circuits ◽  
Amorphous Metal ◽  
Metal Oxide Semiconductors ◽  
Programmable Logic ◽  
Oxide Semiconductors ◽  
Amorphous Metal Oxide

scholarly journals Scalable High-Speed Hybrid Complementary Integrated Circuits based on Solution-Processed Organic and Amorphous Metal Oxide Semiconductors

2021 ◽  
Author(s):  
Shun Watanabe ◽  
Xiaozhu Wei ◽  
Shohei Kumagai ◽  
Tatsuyuki Makita ◽  
Kotaro Tsuzuku ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Metal Oxide ◽  
High Speed ◽  
High Mobility ◽  
Amorphous Metal ◽  
Metal Oxide Semiconductors ◽  
Ring Oscillators ◽  
Solution Processed ◽  
Oxide Semiconductors ◽  
Amorphous Metal Oxide

Abstract Solution-processed single-crystal organic semiconductors (OSCs) and amorphous metal oxide semiconductors (MOSs) are promising for high-mobility, p- and n-channel thin-film transistors (TFTs), respectively. Organic−inorganic hybrid complementary circuits hence have great potential to satisfy practical requirements; however, some chemical incompatibilities between OSCs and MOSs, such as heat and chemical resistance, conventionally make it difficult to rationally integrate TFTs based on solution-processed OSC and MOS into the same substrates. In this work, we achieved a rational integration method based on the solution-processed semiconductors by carefully managing the device configuration and the deposition and patterning techniques from materials point of view. The balanced high performances as well as the uniform fabrication of the TFTs led to densely integrated five-stage ring oscillators with the stage propagation delay of 1.3 µs, which is the fastest operation among ever reported complementary ring oscillators based on solution-processed semiconductors.

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