scholarly journals High-mobility low-temperature ZnO transistors with low-voltage operation

2010 ◽  
Vol 96 (19) ◽  
pp. 192115 ◽  
Author(s):  
Hyojin Bong ◽  
Wi Hyoung Lee ◽  
Dong Yun Lee ◽  
Beom Joon Kim ◽  
Jeong Ho Cho ◽  
...  
Keyword(s):  
Low Temperature ◽  
Low Voltage ◽  
High Mobility ◽  
Low Voltage Operation

All solution-processed organic single-crystal transistors with high mobility and low-voltage operation

2015 ◽  
Vol 22 ◽  
pp. 1-4 ◽  
Author(s):  
S. Sakai ◽  
J. Soeda ◽  
R. Häusermann ◽  
H. Matsui ◽  
C. Mitsui ◽  
...  
Keyword(s):  
Single Crystal ◽  
Low Voltage ◽  
High Mobility ◽  
Solution Processed ◽  
Low Voltage Operation ◽  
Organic Single Crystal

scholarly journals Low temperature low voltage operation of HEMTs on InP

1994 ◽  
Vol 04 (C6) ◽  
pp. C6-153-C6-158 ◽  
Author(s):  
A. Sylvestre ◽  
P. Crozat ◽  
R. Adde ◽  
A. De Lustrac ◽  
Y. Jin
Keyword(s):  
Low Temperature ◽  
Low Voltage ◽  
Low Voltage Operation

Low-Pressure Crystallization of Sol–Gel-Derived PbZr0.52Ti0.48O3Thin Films at Low Temperature for Low-Voltage Operation

2003 ◽  
Vol 42 (Part 1, No. 5A) ◽  
pp. 2756-2758 ◽  
Author(s):  
Ding-Yeong Wang ◽  
Chao-Hsin Chien ◽  
Chun-Yen Chang ◽  
Ching-Chich Leu ◽  
Jung-Yen Yang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Low Voltage ◽  
Sol Gel ◽  
Low Pressure ◽  
Low Voltage Operation ◽  
Pressure Crystallization

Fabrication of High Performance Organic Thin Film Transistor Arrays and Application to 5-inch Flexible Displays

2009 ◽  
Vol 1196 ◽  
Author(s):  
Yoshihide Fujisaki ◽  
Tatsuya Takei ◽  
Yoshiki Nakajima ◽  
Hiroto Sato ◽  
Mitsunori Suzuki ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Low Voltage ◽  
High Mobility ◽  
Polymer Materials ◽  
Operating Voltage ◽  
Driving Voltage ◽  
Organic Thin Film ◽  
Flexible Displays ◽  
Low Voltage Operation ◽  
Moving Images

AbstractWe have demonstrated a 5-inch flexible color liquid crystal display (LCD) and organic light emitting display (OLED) driven by low-voltage operation organic TFT. In order to achieve high-quality and high-resolution moving images, OTFTs with high performances such as a high mobility, high ON/OFF ratio, low sub-threshold slope (SS) and low operating voltage, are developed. We fabricated pentacene-based low-voltage operation OTFT with a Ta2O5 gate dielectric prepared at a low temperature process. The resulting OTFT array showed a high mobility of 0.3-0.4 cm2/Vs, ON/OFF ratio over 107, VTH=2.7V, and low SS=0.3 V/decade. OTFTs with solution-processable materials such as fluoropolymer gate dielectric and liquid-crystalline semiconducting polymers, PBTTT, were also investigated. Electrical characteristics and stabilities of these devices will be discussed. In the final section, we will demonstrate OTFT-driven flexible displays. Both of the flexible LC device and the OLED device were successfully integrated on the pentacene-based OTFT arrays. Printing and lamination techniques were introduced to assemble the flexible LC device. Phosphorescent polymer materials, which can be patterned by ink-jet printing, were used for emitting layer of OLED. Color moving images were successively shown on the resulting 5-inch displays using an active-matrix driving technique of the OTFT at a low driving voltage of 15V.

Current State of Biological High-Resolution Scanning Electron Microscopy

1988 ◽  
Vol 46 ◽  
pp. 180-181 ◽  
Author(s):  
Klaus-Ruediger Peters
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Backscattered Electrons ◽  
Lens Position ◽  
Low Voltage Operation ◽  
Signal Collection ◽  
Probe Size ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

A new generation of high performance field emission scanning electron microscopes (FSEM) is now commercially available (JEOL 890, Hitachi S 900, ISI OS 130-F) characterized by an "in lens" position of the specimen where probe diameters are reduced and signal collection improved. Additionally, low voltage operation is extended to 1 kV. Compared to the first generation of FSEM (JE0L JSM 30, Hitachi S 800), which utilized a specimen position below the final lens, specimen size had to be reduced but useful magnification could be impressively increased in both low (1-4 kV) and high (5-40 kV) voltage operation, i.e. from 50,000 to 200,000 and 250,000 to 1,000,000 x respectively.At high accelerating voltage and magnification, contrasts on biological specimens are well characterized1 and are produced by the entering probe electrons in the outmost surface layer within -vl nm depth. Backscattered electrons produce only a background signal. Under these conditions (FIG. 1) image quality is similar to conventional TEM (FIG. 2) and only limited at magnifications >1,000,000 x by probe size (0.5 nm) or non-localization effects (%0.5 nm).

High resolution at low voltage: A new approach

1989 ◽  
Vol 47 ◽  
pp. 76-77
Author(s):  
Arthur V. Jones
Keyword(s):  
Low Voltage ◽  
Emission Sources ◽  
New Approach ◽  
Design Concepts ◽  
Probe Diameter ◽  
Low Voltage Operation ◽  
Sufficient Intensity ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Immersion Type

With the introduction of field-emission sources and “immersion-type” objective lenses, the resolution obtainable with modern scanning electron microscopes is approaching that obtainable in STEM and TEM-but only with specific types of specimens. Bulk specimens still suffer from the restrictions imposed by internal scattering and the need to be conducting. Advances in coating techniques have largely overcome these problems but for a sizeable body of specimens, the restrictions imposed by coating are unacceptable.For such specimens, low voltage operation, with its low beam penetration and freedom from charging artifacts, is the method of choice.Unfortunately the technical dificulties in producing an electron beam sufficiently small and of sufficient intensity are considerably greater at low beam energies — so much so that a radical reevaluation of convential design concepts is needed.The probe diameter is usually given by

Low temperature mobility improvement in high-mobility strained-Si/Si1-xGex multilayer MOSFETs

1998 ◽  
Vol 08 (PR3) ◽  
pp. Pr3-57-Pr3-60
Author(s):  
J. B. Roldán ◽  
F. Gámiz ◽  
J. A. López-Villanueva ◽  
J. E. Carceller
Keyword(s):  
Low Temperature ◽  
High Mobility ◽  
Strained Si
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