Three‐dimensional transient thermal analysis for laser chemical vapor deposition on uniformly moving finite slabs

1989 ◽  
Vol 65 (8) ◽  
pp. 2923-2934 ◽  
Author(s):  
A. Kar ◽  
J. Mazumder
Keyword(s):  
Thermal Analysis ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Laser Chemical Vapor Deposition ◽  
Transient Thermal Analysis ◽  
Transient Thermal

Generation of Process Plans for Laser Chemical Vapor Deposition

2003 ◽  
Author(s):  
Jae-hyoung Park ◽  
David W. Rosen
Keyword(s):  
Chemical Vapor Deposition ◽  
Process Planning ◽  
Vapor Deposition ◽  
Local Heating ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Layer By Layer ◽  
Laser Chemical Vapor Deposition ◽  
Thin Walls ◽  
Planning Methods

Rapid Prototyping (RP) technology refers to the fabrication of an arbitrary three-dimensional part layer-by-layer. Laser Chemical Vapor Deposition (LCVD) is a promising RP and manufacturing process that deposits metals and ceramics by local heating of a substrate with a laser. Even though many LCVD process planning characteristics are shared with those of more common RP technologies, LCVD process planning requires new efforts due to its unique characteristics. Unlike a conventional RP technology that only builds horizontal planar layers, LCVD can build conformal layers (conform to nonplanar substrates), thin walls, and fibers (rod-shape) as build primitives. Based on these unique characteristics, we have developed the overall approach for LCVD process planning and developed several of the main methods in this approach. In this paper, we report on the overall approach, the conformal slicing algorithm, and two different 1D path generation algorithms. Two examples are presented to illustrate the application of the process planning methods.

A Three-Dimensional Analysis of Particle Deposition for the Modified Chemical Vapor Deposition (MCVD) Process

1992 ◽  
Vol 114 (3) ◽  
pp. 735-742 ◽  
Author(s):  
Y. T. Lin ◽  
M. Choi ◽  
R. Greif
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Particle Deposition ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Secondary Flows ◽  
Circumferential Direction ◽  
Forced Flow ◽  
Flow Rates ◽  
Entry Length

A study has been made of the deposition of particles that occurs during the modified chemical vapor deposition (MCVD) process. The three-dimensional conservation equations of mass, momentum, and energy have been solved numerically for forced flow, including the effects of buoyancy and variable properties in a heated, rotating tube. The motion of the particles that are formed is determined from the combined effects resulting from thermophoresis and the forced and secondary flows. The effects of torch speed, rotational speed, inlet flow rate, tube radius, and maximum surface temperature on deposition are studied. In a horizontal tube, buoyancy results in circumferentially nonuniform temperature and velocity fields and particle deposition. The effect of tube rotation greatly reduces the nonuniformity of particle deposition in the circumferential direction. The process is chemical-reaction limited at larger flow rates and particle-transport limited at smaller flow rates. The vertical tube geometry has also been studied because its symmetric configuration results in uniform particle deposition in the circumferential direction. The “upward” flow condition results in a large overall deposition efficiency, but this is also accompanied by a large “tapered entry length.”

Heteroepitaxial Nucleation and Growth of Ge ON Si(100) Surfaces Using Remote Plasma Enhanced Chemical Vapor Deposition

1988 ◽  
Vol 116 ◽  
Author(s):  
R.A. Rudder ◽  
S.V. Hattangady ◽  
D.J. Vitkavage ◽  
R.J. Markunas
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Layer By Layer ◽  
Heteroepitaxial Growth ◽  
Remote Plasma ◽  
Dimensional Growth ◽  
Diffraction Patterns

Heteroepitaxial growth of Ge on Si(100) has been accomplished using remote plasma enhanced chemical vapor deposition at 300*#x00B0;C. Reconstructed surfaces with diffraction patterns showing non-uniform intensity variations along the lengths of the integral order streaks are observed during the first 100 Å of deposit. This observation of an atomically rough surface during the initial stages of growth is an indication of three-dimensional growth. As the epitaxial growth proceeds, the diffraction patterns become uniform with extensive streaking on both the integral and fractional order streaks. Subsequent growth, therefore, takes place in a layer-by-layer, two-dimensional mode. X-ray photoelectron spectroscopy of the early nucleation stages, less than 80 Å, show that there is uniform coverage with no evidence of island formation.

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