Chemical dry etching of GaAs and InP by Cl2using a new ultrahigh‐vacuum dry‐etching molecular‐beam‐epitaxy system

1989 ◽  
Vol 65 (1) ◽  
pp. 168-171 ◽  
Author(s):  
N. Furuhata ◽  
H. Miyamoto ◽  
A. Okamoto ◽  
K. Ohata
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ultrahigh Vacuum ◽  
Dry Etching ◽  
Molecular Beam Epitaxy System

scholarly journals A portable molecular beam epitaxy system for in situ x-ray investigations at synchrotron beamlines

2012 ◽  
Vol 83 (10) ◽  
pp. 105112 ◽  
Author(s):  
T. Slobodskyy ◽  
P. Schroth ◽  
D. Grigoriev ◽  
A. A. Minkevich ◽  
D. Z. Hu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray ◽  
Molecular Beam Epitaxy System ◽  
Synchrotron Beamlines

Growth of Ni3Ga2, NiGa and Ni2Ga3 on GaAs (001) and (111) in a molecular beam epitaxy system

1989 ◽  
Vol 95 (1-4) ◽  
pp. 427-430 ◽  
Author(s):  
A. Guivarc'h ◽  
J. Caulet ◽  
B. Guenais ◽  
Y. Ballini ◽  
R. Guérin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy System
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