Efficient charge injection from a high work function metal in high mobility n-type polymer field-effect transistors

2010 ◽  
Vol 96 (18) ◽  
pp. 183303 ◽  
Author(s):  
M. Caironi ◽  
C. Newman ◽  
J. R. Moore ◽  
D. Natali ◽  
H. Yan ◽  
...  
Keyword(s):  
Work Function ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Charge Injection ◽  
High Work Function ◽  
Efficient Charge ◽  
High Work

High mobility top-gated poly(3-hexylthiophene) field-effect transistors with high work-function Pt electrodes

2010 ◽  
Vol 518 (14) ◽  
pp. 4024-4029 ◽  
Author(s):  
Kang-Jun Baeg ◽  
Dongyoon Khim ◽  
Dong-Yu Kim ◽  
Jae Bon Koo ◽  
In-Kyu You ◽  
...  
Keyword(s):  
Work Function ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
High Work Function ◽  
Pt Electrodes ◽  
High Work

scholarly journals Modulating the charge injection in organic field-effect transistors: fluorinated oligophenyl self-assembled monolayers for high work function electrodes

2015 ◽  
Vol 3 (13) ◽  
pp. 3007-3015 ◽  
Author(s):  
Oliver Fenwick ◽  
Colin Van Dyck ◽  
Kathiresan Murugavel ◽  
David Cornil ◽  
Federica Reinders ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Work Function ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Self Assembled Monolayers ◽  
Organic Transistors ◽  
Organic Field Effect Transistors ◽  
High Work Function ◽  
Assembled Monolayers ◽  
High Work

Experiment and theory reveals origin of work function and contact resistance of fluorinated oligophenylthiol-treated electrodes in organic transistors.

scholarly journals Effect of Gate Electrode Work-Function on Source Charge Injection in Electrolyte-Gated Organic Field-Effect Transistors

2013 ◽  
Vol 24 (5) ◽  
pp. 695-700 ◽  
Author(s):  
Simone Fabiano ◽  
Slawomir Braun ◽  
Mats Fahlman ◽  
Xavier Crispin ◽  
Magnus Berggren
Keyword(s):  
Work Function ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Organic Field Effect Transistors ◽  
Gate Electrode

High mobility BaSnO3 films and field effect transistors on non-perovskite MgO substrate

2016 ◽  
Vol 109 (26) ◽  
pp. 262102 ◽  
Author(s):  
Juyeon Shin ◽  
Young Mo Kim ◽  
Youjung Kim ◽  
Chulkwon Park ◽  
Kookrin Char
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Mgo Substrate

scholarly journals Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 901
Author(s):  
Gizem Acar ◽  
Muhammad Javaid Iqbal ◽  
Mujeeb Ullah Chaudhry
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Limiting Factors ◽  
Hole Injection ◽  
Large Area ◽  
Device Structure ◽  
Light Emitting ◽  
Emission Area ◽  
P Type

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm2 V−1 s−1 and EQE of 1.6% at a luminance of 2600 cd m−2. Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.

scholarly journals All-Organic, Low Voltage, Transparent and Compliant Organic Field-Effect Transistor Fabricated by Means of Large-Area, Cost-Effective Techniques

2020 ◽  
Vol 10 (19) ◽  
pp. 6656
Author(s):  
Stefano Lai ◽  
Giulia Casula ◽  
Pier Carlo Ricci ◽  
Piero Cosseddu ◽  
Annalisa Bonfiglio
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Large Area ◽  
Parylene C ◽  
Biomedical Sensing ◽  
Novel Applications

The development of electronic devices with enhanced properties of transparency and conformability is of high interest for the development of novel applications in the field of bioelectronics and biomedical sensing. Here, a fabrication process for all organic Organic Field-Effect Transistors (OFETs) by means of large-area, cost-effective techniques such as inkjet printing and chemical vapor deposition is reported. The fabricated device can operate at low voltages (as high as 4 V) with ideal electronic characteristics, including low threshold voltage, relatively high mobility and low subthreshold voltages. The employment of organic materials such as Parylene C, PEDOT:PSS and 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS pentacene) helps to obtain highly transparent transistors, with a relative transmittance exceeding 80%. Interestingly enough, the proposed process can be reliably employed for OFET fabrication over different kind of substrates, ranging from transparent, flexible but relatively thick polyethylene terephthalate (PET) substrates to transparent, 700-nm-thick, compliant Parylene C films. OFETs fabricated on such sub-micrometrical substrates maintain their functionality after being transferred onto complex surfaces, such as human skin and wearable items. To this aim, the electrical and electromechanical stability of proposed devices will be discussed.

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