Efficient Charge Injection in p-Type Polymer Field-Effect Transistors with Low-Cost Molybdenum Electrodes through V2O5 Interlayer

2013 ◽  
Vol 5 (12) ◽  
pp. 5804-5810 ◽  
Author(s):  
Kang-Jun Baeg ◽  
Gwang-Tae Bae ◽  
Yong-Young Noh
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Charge Injection ◽  
Efficient Charge ◽  
P Type

scholarly journals Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 901
Author(s):  
Gizem Acar ◽  
Muhammad Javaid Iqbal ◽  
Mujeeb Ullah Chaudhry
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Limiting Factors ◽  
Hole Injection ◽  
Large Area ◽  
Device Structure ◽  
Light Emitting ◽  
Emission Area ◽  
P Type

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm2 V−1 s−1 and EQE of 1.6% at a luminance of 2600 cd m−2. Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.

Efficient charge injection from a high work function metal in high mobility n-type polymer field-effect transistors

2010 ◽  
Vol 96 (18) ◽  
pp. 183303 ◽  
Author(s):  
M. Caironi ◽  
C. Newman ◽  
J. R. Moore ◽  
D. Natali ◽  
H. Yan ◽  
...  
Keyword(s):  
Work Function ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Charge Injection ◽  
High Work Function ◽  
Efficient Charge ◽  
High Work

Controlling charge injection properties in polymer field-effect transistors by incorporation of solution processed molybdenum trioxide

2015 ◽  
Vol 17 (31) ◽  
pp. 20160-20167 ◽  
Author(s):  
Dang Xuan Long ◽  
Yong Xu ◽  
Huai-xin Wei ◽  
Chuan Liu ◽  
Yong-Young Noh
Keyword(s):  
Field Effect ◽  
Molybdenum Trioxide ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Organic Field Effect Transistors ◽  
Solution Processed ◽  
P Type

A simply synthesized MoO3 is used as charge injection layers for printed p-type organic field-effect transistors (OFETs).

Bi-directional porous alumina templates for nanowire field-effect transistors

2005 ◽  
Vol 901 ◽  
Author(s):  
Travis L. Wade ◽  
Xavier Hoffer ◽  
Jean-Francois Dayen ◽  
Al Dughaim Mohammed ◽  
Fahad Humel ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Porous Alumina ◽  
Gate Electrode ◽  
New Approach ◽  
Nanoporous Template ◽  
New Ideas ◽  
The Wire ◽  
P Type

AbstractUsing readily available materials and equipment we are able to sculpture aluminium wires into cylindrical, bi-directional templates for the synthesis and contacting of nanowires as field-effect transistors. The nanowire template is made by partial anodization of the wire perpendicular to its axis as an isolating layer for a gate electrode, vapour deposition of a metal on this layer as a gate, cutting the wire perpendicular to its axis, and finally anodizing the newly exposed area parallel to the wire axis as a template for nanowires. This results in a nanowire template surrounded by a gate electrode that is isolated from the template by the first anodisation layer.The utility of this structure is demonstrated by a ZnO nanowire field-effect transistor. The ZnO was made by electrodeposition of Zn nanowires in the interior nanoporous template during which an anodic pulse was applied to form a layer of ZnO in the middle of the zinc nanowires. The IV and transfer plots indicate that the ZnO is p-type in depletion mode.This 3-D transistor is unique in that it can be totally fabricated in a beaker without the need for costly clean room and lithography facilities. The ease and low cost of this new approach to nanodevices will have the effect of liberating nanoscience for scientists of moderate means. As a result this will open nanoscience to new ideas and more inputs.

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

Sign in / Sign up

Export Citation Format

Share Document