Hole confinement in boron δ-doped silicon quantum wells studied by deep-level transient spectroscopy

1996 ◽  
Vol 54 (4) ◽  
pp. 2662-2666 ◽  
Author(s):  
Jian-hong Zhu ◽  
Da-wei Gong ◽  
Bo Zhang ◽  
Fang Lu ◽  
Chi Sheng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Doped Silicon ◽  
Transient Spectroscopy ◽  
Hole Confinement

Thermal hole emission from Si/Si1−xGex/Si quantum wells by deep level transient spectroscopy

1995 ◽  
Vol 78 (9) ◽  
pp. 5439-5447 ◽  
Author(s):  
O. Chretien ◽  
R. Apetz ◽  
L. Vescan ◽  
A. Souifi ◽  
H. Lüth ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy

scholarly journals Conduction band offsets in CdZnSSe/ZnSSe single quantum wells measured by deep level transient spectroscopy

1996 ◽  
Vol 68 (25) ◽  
pp. 3591-3593 ◽  
Author(s):  
P. F. Baude ◽  
M. A. Haase ◽  
G. M. Haugen ◽  
K. K. Law ◽  
T. J. Miller ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Single Quantum ◽  
Band Offsets ◽  
Transient Spectroscopy

Interfacial defects inSi1−xGex/Si quantum wells detected by deep-level transient spectroscopy

1994 ◽  
Vol 50 (24) ◽  
pp. 18226-18230 ◽  
Author(s):  
Qinhua Wang ◽  
Fang Lu ◽  
Dawei Gong ◽  
Xiangjun Chen ◽  
Jianbao Wang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Interfacial Defects ◽  
Transient Spectroscopy

On Deep Level Transient Spectroscopy of Extended Defects in n-Type 4H-SiC

2017 ◽  
Vol 897 ◽  
pp. 201-204 ◽  
Author(s):  
Jonas Weber ◽  
Heiko B. Weber ◽  
Michael Krieger
Keyword(s):  
Quantum Wells ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Differential Capacitance ◽  
Extended Defects ◽  
Extended Defect ◽  
Dlts Spectrum ◽  
Poisson Solver ◽  
Transient Spectroscopy

We have performed capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements on Schottky contacts fabricated on triangular defects in 4H-SiC epitaxial layers. These measurements are a case study on the effect of a specific extended defect on the DLTS spectrum in order to contribute to the physical understanding of curious features occasionally observed in DLTS spectra. Our measurements reveal an inversion of the DLTS signal depending on applied voltages and filling pulse lengths, and a step in the C-V characteristic of the Schottky diode. We present a model that qualitatively describes the experimentally obtained data. In this model, we assume that stacking faults within a triangular defect form quantum wells, which can capture electrons from other defects during the DLTS measurement leading to the inversion of the DLTS spectrum. Moreover, by calculating the differential capacitance using a self-consistent Schrödinger-Poisson-Solver, the step in the C-V measurements is reproduced by our model.

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