Minority‐carrier lifetime measurements and defect‐structure identification for gallium arsenide grown on sapphire by organometallic vapor phase epitaxy

1988 ◽  
Vol 64 (11) ◽  
pp. 6259-6263 ◽  
Author(s):  
M. L. Timmons ◽  
R. K. Ahrenkiel ◽  
M. M. Al‐Jassim ◽  
D. J. Dunlavy
Keyword(s):  
Gallium Arsenide ◽  
Vapor Phase ◽  
Defect Structure ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Vapor Phase Epitaxy ◽  
Structure Identification ◽  
Organometallic Vapor Phase Epitaxy ◽  
Lifetime Measurements

Minority Carrier Lifetime Measurements by Photoinduced Carrier Microwave Absorption Method

2011 ◽  
Vol 50 (3S) ◽  
pp. 03CA02 ◽  
Author(s):  
Toshiyuki Sameshima ◽  
Tomokazu Nagao ◽  
Shinya Yoshidomi ◽  
Kazuya Kogure ◽  
Masahiko Hasumi
Keyword(s):  
Microwave Absorption ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Absorption Method ◽  
Lifetime Measurements

Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay

2009 ◽  
Vol 615-617 ◽  
pp. 295-298 ◽  
Author(s):  
Laurent Ottaviani ◽  
Olivier Palais ◽  
Damien Barakel ◽  
Marcel Pasquinelli
Keyword(s):  
Absorption Spectra ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Optical Excitation ◽  
Minority Carrier Lifetime ◽  
Lifetime Measurements ◽  
Recombination Processes ◽  
Photoconductivity Decay ◽  
P Type ◽  
Non Destructive

We report on measurements of the minority carrier lifetime for different epitaxial 4H-SiC layers by using the microwave photoconductivity decay (µ-PCD) method. This is a non-contacting, non-destructive method very useful for the monitoring of recombination processes in semiconductor material. Distinct samples have been analyzed, giving different lifetime values. Transmittance and absorption spectra have also been carried out. The n-type layers, giving rise to a specific absorption peak near 470 nm, are not sensitive to optical excitation for the used wavelengths, as opposite to p-type layers whose lifetime values depend on thickness and doping.

Gallium arsenide surface reconstructions during organometallic vapor‐phase epitaxy

1992 ◽  
Vol 60 (21) ◽  
pp. 2610-2612 ◽  
Author(s):  
F. J. Lamelas ◽  
P. H. Fuoss ◽  
P. Imperatori ◽  
D. W. Kisker ◽  
G. B. Stephenson ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Surface Reconstructions
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