Apparatus for minority‐carrier lifetime measurements on light‐emitting devices

1993 ◽  
Vol 64 (5) ◽  
pp. 1268-1270
Author(s):  
Miroslav Kot
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Lifetime Measurements ◽  
Light Emitting ◽  
Light Emitting Devices

Temperature-dependent minority-carrier lifetime measurements of red AlGaAs light emitting diodes

1995 ◽  
Vol 24 (10) ◽  
pp. 1407-1412 ◽  
Author(s):  
F. M. Steranka ◽  
D. C. Defevere ◽  
Camras ◽  
S. L. Rudaz ◽  
D. K. Mc Elfresh ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Temperature Dependent ◽  
Lifetime Measurements ◽  
Light Emitting

Minority Carrier Lifetime Measurements by Photoinduced Carrier Microwave Absorption Method

2011 ◽  
Vol 50 (3S) ◽  
pp. 03CA02 ◽  
Author(s):  
Toshiyuki Sameshima ◽  
Tomokazu Nagao ◽  
Shinya Yoshidomi ◽  
Kazuya Kogure ◽  
Masahiko Hasumi
Keyword(s):  
Microwave Absorption ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Absorption Method ◽  
Lifetime Measurements

Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay

2009 ◽  
Vol 615-617 ◽  
pp. 295-298 ◽  
Author(s):  
Laurent Ottaviani ◽  
Olivier Palais ◽  
Damien Barakel ◽  
Marcel Pasquinelli
Keyword(s):  
Absorption Spectra ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Optical Excitation ◽  
Minority Carrier Lifetime ◽  
Lifetime Measurements ◽  
Recombination Processes ◽  
Photoconductivity Decay ◽  
P Type ◽  
Non Destructive

We report on measurements of the minority carrier lifetime for different epitaxial 4H-SiC layers by using the microwave photoconductivity decay (µ-PCD) method. This is a non-contacting, non-destructive method very useful for the monitoring of recombination processes in semiconductor material. Distinct samples have been analyzed, giving different lifetime values. Transmittance and absorption spectra have also been carried out. The n-type layers, giving rise to a specific absorption peak near 470 nm, are not sensitive to optical excitation for the used wavelengths, as opposite to p-type layers whose lifetime values depend on thickness and doping.

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