Gallium arsenide surface reconstructions during organometallic vapor‐phase epitaxy

F. J. Lamelas; P. H. Fuoss; P. Imperatori; D. W. Kisker; G. B. Stephenson; S. Brennan

doi:10.1063/1.106924

Gallium arsenide surface reconstructions during organometallic vapor‐phase epitaxy

Applied Physics Letters ◽

10.1063/1.106924 ◽

1992 ◽

Vol 60 (21) ◽

pp. 2610-2612 ◽

Cited By ~ 54

Author(s):

F. J. Lamelas ◽

P. H. Fuoss ◽

P. Imperatori ◽

D. W. Kisker ◽

G. B. Stephenson ◽

...

Keyword(s):

Gallium Arsenide ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

Surface Reconstructions

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Growth and diffusion of abrupt beryllium‐doped profiles in gallium arsenide by organometallic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.100412 ◽

1988 ◽

Vol 53 (24) ◽

pp. 2411-2413 ◽

Cited By ~ 26

Author(s):

M. J. Tejwani ◽

H. Kanber ◽

B. M. Paine ◽

J. M. Whelan

Keyword(s):

Gallium Arsenide ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

And Diffusion

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Minority‐carrier lifetime measurements and defect‐structure identification for gallium arsenide grown on sapphire by organometallic vapor phase epitaxy

Journal of Applied Physics ◽

10.1063/1.342084 ◽

1988 ◽

Vol 64 (11) ◽

pp. 6259-6263 ◽

Cited By ~ 4

Author(s):

M. L. Timmons ◽

R. K. Ahrenkiel ◽

M. M. Al‐Jassim ◽

D. J. Dunlavy

Keyword(s):

Gallium Arsenide ◽

Vapor Phase ◽

Defect Structure ◽

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Vapor Phase Epitaxy ◽

Structure Identification ◽

Organometallic Vapor Phase Epitaxy ◽

Lifetime Measurements

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Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy

Journal of Applied Physics ◽

10.1063/1.340143 ◽

1988 ◽

Vol 63 (9) ◽

pp. 4485-4493 ◽

Cited By ~ 95

Author(s):

P. Enquist ◽

J. A. Hutchby ◽

T. J. de Lyon

Keyword(s):

Gallium Arsenide ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Organometallic Vapor Phase Epitaxy ◽

And Diffusion

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Initial growth of gallium arsenide on silicon by organometallic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.100033 ◽

1988 ◽

Vol 53 (12) ◽

pp. 1101-1103 ◽

Cited By ~ 11

Author(s):

S. J. Rosner ◽

Jun Amano ◽

J. W. Lee ◽

J. C. C. Fan

Keyword(s):

Gallium Arsenide ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Initial Growth ◽

Organometallic Vapor Phase Epitaxy

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Mechanism of doping gallium arsenide with carbon tetrachloride during organometallic vapor-phase epitaxy

Journal of Electronic Materials ◽

10.1007/s11664-997-0018-7 ◽

1997 ◽

Vol 26 (10) ◽

pp. 1189-1193 ◽

Cited By ~ 2

Author(s):

M. L. Warddrip ◽

M. J. Kappers ◽

L. Li ◽

H. Qi ◽

B. K. Han ◽

...

Keyword(s):

Gallium Arsenide ◽

Carbon Tetrachloride ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

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Novel Precursors for Organometallic Vapor Phase Epitaxy

10.21236/ada251340 ◽

1992 ◽

Author(s):

G. B. Stringfellow

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

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Ultrahigh mobility two‐dimensional electron gas in AlxGa1−xAs/GaAs heterostructures by organometallic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.110614 ◽

1993 ◽

Vol 63 (14) ◽

pp. 1960-1962 ◽

Cited By ~ 3

Author(s):

Ricardo Basco ◽

Farid Agahi ◽

Kei May Lau

Keyword(s):

Vapor Phase ◽

Electron Gas ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Dimensional Electron Gas

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Strong photoluminescence from AlP/GaP disordered superlattice grown by atmospheric pressure organometallic vapor phase epitaxy using tertiarybutylphosphine

Applied Physics Letters ◽

10.1063/1.108556 ◽

1993 ◽

Vol 62 (8) ◽

pp. 888-890 ◽

Cited By ~ 27

Author(s):

Xue‐Lun Wang ◽

Akihiro Wakahara ◽

Akio Sasaki

Keyword(s):

Vapor Phase ◽

Atmospheric Pressure ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

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Luminescence properties of Er,O-codoped III–V semiconductors grown by organometallic vapor phase epitaxy

Physica B Condensed Matter ◽

10.1016/s0921-4526(99)00645-6 ◽

1999 ◽

Vol 273-274 ◽

pp. 770-773 ◽

Cited By ~ 32

Author(s):

Y Fujiwara ◽

T Kawamoto ◽

T Koide ◽

Y Takeda

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Luminescence Properties ◽

Organometallic Vapor Phase Epitaxy

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Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride by metalorganic vapor-phase epitaxy

Journal of Applied Physics ◽

10.1063/1.370731 ◽

1999 ◽

Vol 86 (1) ◽

pp. 318-324 ◽

Cited By ~ 3

Author(s):

M. J. Begarney ◽

L. Li ◽

B.-K. Han ◽

D. C. Law ◽

C. H. Li ◽

...

Keyword(s):

Gallium Arsenide ◽

Carbon Tetrachloride ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Carbon Doping ◽

Etch Pits

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