Deposition of a Si monolayer on sapphire using an ArF excimer laser for Si epitaxial growth

1988 ◽  
Vol 64 (4) ◽  
pp. 2087-2091 ◽  
Author(s):  
M. Ishida ◽  
H. Tanaka ◽  
K. Sawada ◽  
A. Namiki ◽  
T. Nakamura ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Excimer Laser ◽  
Arf Excimer Laser

Epitaxy of SiC Films on Sapphire by Laser CVD

1987 ◽  
Vol 97 ◽  
Author(s):  
Hirohide Nakamatsu ◽  
Shichio Kawai
Keyword(s):  
Epitaxial Growth ◽  
Excimer Laser ◽  
Low Pressure ◽  
Epitaxial Films ◽  
Twin Structure ◽  
Arf Excimer Laser ◽  
Carrier Gases ◽  
Laser Cvd ◽  
Sic Films ◽  
Peeling Off

ABSTRACTArF excimer laser CVD was performed in a very-low pressure reactor. C2H2 and Si2H6 were used as source gases and carrier gases were not used. Epitaxial 3C-type SiC(111) grew parallel to α-Al2O3 (0001) substrate. It had a twin structure. Mismatch between the lattice parameters was estimated to be 12%. The epitaxial growth occurred down to 980°C and the films about 0.5μm in thickness grew at 1150°C for 30 minutes. Unirradiated films were polycrystalline or spontaneously peeling-off epitaxial films, while irradiated ones were strongly adherent epitaxial films.

Argon Ion and Excimer Laser Induced Epitaxy of GaP

1988 ◽  
Vol 129 ◽  
Author(s):  
U. Sudarsan ◽  
N. W. Cody ◽  
T. Dosluoglu ◽  
R. Solanki
Keyword(s):  
Epitaxial Growth ◽  
Excimer Laser ◽  
Direct Write ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Arf Excimer Laser ◽  
Argon Ion ◽  
Focused Beam

ABSTRACTLaser-induced epitaxial growth of GaP has been achieved using both pyrolytic and photolytic reactions. A focused beam from an argon ion laser operating at 514.5 nm was used to ‘direct-write’ epitaxial microstructures of GaP on silicon using a pyrolytic process. An ArF excimer laser has also been used to demonstrate homoepitaxy utilizing the photolytic process.

High Resolution Displacement of Functional Groups onto Fluorocarbon Resin Surface by Using ArF Excimer Laser

1996 ◽  
Vol 451 ◽  
Author(s):  
T. Shimizu ◽  
M. Murahara
Keyword(s):  
Contact Angle ◽  
High Resolution ◽  
Laser Beam ◽  
Thin Layer ◽  
Functional Groups ◽  
Excimer Laser ◽  
Laser Fluence ◽  
Large Area ◽  
Three Solutions ◽  
Arf Excimer Laser

ABSTRACTA Fluorocarbon resin surface was selectively modified by irradiation with a ArF laser beam through a thin layer of NaAlO2, B(OH)3, or H2O solution to give a hydrophilic property. As a result, with low fluence, the surface was most effectively modified with the NaAlO2 solution among the three solutions. However, the contact angle in this case changed by 10 degrees as the fluence changed only 1mJ/cm2. When modifying a large area of the surface, high resolution displacement could not be achieved because the laser beam was not uniform in displacing functional groups. Thus, the laser fluence was successfully made uniform by homogenizing the laser beam; the functional groups were replaced on the fluorocarbon resin surface with high resolution, which was successfully modified to be hydrophilic by distributing the laser fluence uniformly.

Characterization of GaAs surfaces treated with phosphine gas photodecomposed by an ArF excimer laser

1998 ◽  
Vol 72 (12) ◽  
pp. 1472-1474 ◽  
Author(s):  
Takashi Sugino ◽  
Hideaki Ninomiya ◽  
Junji Shirafuji ◽  
Koichiro Matsuda
Keyword(s):  
Excimer Laser ◽  
Arf Excimer Laser

Transmission of corneal collagen during arf excimer laser ablation

1993 ◽  
Vol 13 (2) ◽  
pp. 204-210 ◽  
Author(s):  
M. N. Ediger ◽  
G. H. Pettit ◽  
R. P. Weiblinger ◽  
C. H. Chen
Keyword(s):  
Laser Ablation ◽  
Excimer Laser ◽  
Excimer Laser Ablation ◽  
Arf Excimer Laser ◽  
Corneal Collagen
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