Epitaxy of SiC Films on Sapphire by Laser CVD

1987 ◽  
Vol 97 ◽  
Author(s):  
Hirohide Nakamatsu ◽  
Shichio Kawai
Keyword(s):  
Epitaxial Growth ◽  
Excimer Laser ◽  
Low Pressure ◽  
Epitaxial Films ◽  
Twin Structure ◽  
Arf Excimer Laser ◽  
Carrier Gases ◽  
Laser Cvd ◽  
Sic Films ◽  
Peeling Off

ABSTRACTArF excimer laser CVD was performed in a very-low pressure reactor. C2H2 and Si2H6 were used as source gases and carrier gases were not used. Epitaxial 3C-type SiC(111) grew parallel to α-Al2O3 (0001) substrate. It had a twin structure. Mismatch between the lattice parameters was estimated to be 12%. The epitaxial growth occurred down to 980°C and the films about 0.5μm in thickness grew at 1150°C for 30 minutes. Unirradiated films were polycrystalline or spontaneously peeling-off epitaxial films, while irradiated ones were strongly adherent epitaxial films.

Synthesis of Epitaxial Silicon Carbide Films by Laser CVD

1987 ◽  
Vol 101 ◽  
Author(s):  
Hirohide Nakamatsu ◽  
Kazuhiko Hirata ◽  
Shichio Kawai
Keyword(s):  
Film Growth ◽  
Uv Light ◽  
Epitaxial Films ◽  
Epitaxial Silicon ◽  
Uv Light Irradiation ◽  
Laser Cvd ◽  
By Products ◽  
Sic Films ◽  
Gas Supply ◽  
Blue Photoluminescence

ABSTRACTArF exciraer laser CVD was performed to give epitaxial SiC films on the sapphire or (α-A12O3 (0001) substrate. The rate of film growth was limited by the diffusion of the supplied gases. Small amounts of the gas supply failed to produce the SiC deposition and etched the substrate. The UV light irradiation of the substrate was necessary for the photo-excitation to grow the adherent epitaxial films. Filtered UV light from a D2 lamp revealed that the light with the wavelength shorter than about 310nm was effective for the epitaxial growth. It was found to be essential to excite intermediate products or by-products in the absorbed layer on the substrate. The epitaxial SiC films on the αA12O3 gave blue photoluminescence which may be ascribed to the superstructure of 3C-type SiC crystals.

Comparison of the Processes Induced by Mercury Lamp and ArF Excimer Laser Photoassisted CVD of a-Si:H Films

1986 ◽  
Vol 75 ◽  
Author(s):  
C. Fuchs ◽  
E. Fogarassy
Keyword(s):  
Excimer Laser ◽  
Low Pressure ◽  
Reaction Chamber ◽  
Mercury Lamp ◽  
Silicon Deposition ◽  
Arf Excimer Laser

AbstractWe compare, in this study, the photoassisted processes for silicon deposition using both a low pressure mercury lamp and an ArF excimer laser for the specific case where the SiH4 gas is sealed in the reaction chamber.

ArF-Excimer-Laser Annealing of 3C-SiC Films

1998 ◽  
Vol 37 (Part 1, No. 1) ◽  
pp. 94-95 ◽  
Author(s):  
Toru Mizunami ◽  
Naotake Toyama
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Arf Excimer Laser ◽  
Sic Films

Repeatability of Epitaxial Growth of n-Type 4H-SiC Films by High Speed Wafer Rotation Vertical CVD Tool

2019 ◽  
Vol 963 ◽  
pp. 101-104 ◽  
Author(s):  
Yoshiaki Daigo ◽  
Akio Ishiguro ◽  
Shigeaki Ishii ◽  
Yoshikazu Moriyama ◽  
Kunihiko Suzuki ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Carrier Concentration ◽  
High Speed ◽  
Epitaxial Films ◽  
Short Term ◽  
Gas Nozzle ◽  
Sic Films ◽  
Growth Experiments ◽  
Nozzle Structure

N-type 4H-SiC homo-epitaxial films were grown by high speed wafer rotation vertical CVD tool, and both short term repeatability and long term repeatability of epitaxial growth were investigated. In the short term repeatability investigated by 6 epitaxial wafers chosen from successively grown 12 epitaxial wafers using same recipe, it was found that total variation of thickness and carrier concentration for all measurement points of 6 wafers is 1.44 and 4.64 % respectively, which indicates excellent repeatability as well as high uniform thickness and carrier concentration. In the long term repeatability investigated by a very large number of growth experiments, probability achieving target uniformity of thickness and carrier concentration of the SiC films was increased up to 1.32 times by optimizing gas nozzle structure in gas inlet compared with in the case of conventional gas nozzles. Moreover, adjustment range of C/Si ratio necessary to achieve target uniformity of thickness and carrier concentration of the films was considerably reduced to 22 % by optimized gas nozzles.

Epitaxial growth and electrical performance of graphene/3C–SiC films by laser CVD

2020 ◽  
Vol 826 ◽  
pp. 154198 ◽  
Author(s):  
Han Guo ◽  
Xiaoyu Yang ◽  
Qingfang Xu ◽  
Wenzhong Lu ◽  
Jun Li ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Electrical Performance ◽  
Laser Cvd ◽  
Sic Films
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