Argon Ion and Excimer Laser Induced Epitaxy of GaP

1988 ◽  
Vol 129 ◽  
Author(s):  
U. Sudarsan ◽  
N. W. Cody ◽  
T. Dosluoglu ◽  
R. Solanki
Keyword(s):  
Epitaxial Growth ◽  
Excimer Laser ◽  
Direct Write ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Arf Excimer Laser ◽  
Argon Ion ◽  
Focused Beam

ABSTRACTLaser-induced epitaxial growth of GaP has been achieved using both pyrolytic and photolytic reactions. A focused beam from an argon ion laser operating at 514.5 nm was used to ‘direct-write’ epitaxial microstructures of GaP on silicon using a pyrolytic process. An ArF excimer laser has also been used to demonstrate homoepitaxy utilizing the photolytic process.

Comparison of CW and Pulsed UV Laser Etching of LiNbO3

1988 ◽  
Vol 129 ◽  
Author(s):  
K.W. Beeson ◽  
N.S. Clements
Keyword(s):  
Lithium Niobate ◽  
Laser Beam ◽  
Excimer Laser ◽  
Uv Laser ◽  
Laser Etching ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

ABSTRACTThe results of CW frequency-doubled argon-ion laser etching and pulsed excimer laser etching of lithium niobate (LiNbO3) are compared. Argon-ion laser etching occurs in the presence of Cl2 at laser intensities of 1.1 MW/cm2 or higher. The 257 nm laser beam with up to 25 mW power is focused to a 1.5 μm diameter spot and scanned at speeds of 10 μm/s or less. Excimer laser etching is done at 248 nm (KrF) with the laser beam focused onto the sample with cylindrical optics. Trenches <20 μm wide and several millimeters long are produced by ablating the target and without scanning the beam. Excimer laser etching of lithium niobate has been attempted in the presence of C12, O2, N2, H2 or air. Excellent results are obtained with air as the etching medium.

Laser Induced Etching for Generation of Si Nanocrystals and Spectroscopic Investigation of Morphology

2005 ◽  
Vol 23 ◽  
pp. 43-46
Author(s):  
H.S. Mavi ◽  
S. Rath ◽  
Arun Shukla
Keyword(s):  
Quantum Confinement ◽  
Silicon Nanocrystals ◽  
Laser Wavelength ◽  
Interconnected Network ◽  
Substrate Type ◽  
Argon Ion Laser ◽  
Si Nanocrystals ◽  
Ion Laser ◽  
Laser Induced Etching ◽  
Argon Ion

Laser-induced etching of silicon is used to generate silicon nanocrystals. The pore structure depends on the substrate type and etching laser wavelength. Porous silicon (PS) samples prepared by Nd:YAG laser (1.16 eV) etching of n-type substrate showed a fairly uniform and highly interconnected network of nearly circular pores separated by thin columnar boundaries, while no circular pits were produced by argon- ion laser (2.41 eV) etching under similar conditions. The size and size distribution of the nanocrystals are investigated by Raman and photoluminescence spectroscopies and analyzed within the framework of quantum confinement models.

Electron temperatures in a segmented-metal argon-ion laser

1972 ◽  
Vol 5 (10) ◽  
pp. 1807-1814 ◽  
Author(s):  
A Maitland ◽  
J C L Cornish
Keyword(s):  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

scholarly journals Spectroscopic Properties of Photoproduct of Hematoporphyrin Derivative Oligomer by Photoradiation of Argon-ion Laser

1988 ◽  
Vol 8 (4) ◽  
pp. 3-9
Author(s):  
Norio MIYOSHI ◽  
Takahiro SEKI ◽  
Shuichi KINOSHITA ◽  
Takashi KUSHIDA ◽  
Tsuyoshi NISHIZAKA ◽  
...  
Keyword(s):  
Spectroscopic Properties ◽  
Hematoporphyrin Derivative ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

scholarly journals Endoscopic phototherapy using argon ion laser for gastrointestinal tumors

1982 ◽  
Vol 3 (1) ◽  
pp. 35-38
Author(s):  
Masatoshi Esaki ◽  
Hideo Hiratsuka ◽  
Mamoru Hiyama ◽  
Osamu Ueda ◽  
Yukio Toda ◽  
...  
Keyword(s):  
Gastrointestinal Tumors ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion
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