Nondestructive characterization of oxygen‐ion‐implanted silicon‐ on‐insulator using multiple‐angle ellipsometry

1988 ◽  
Vol 64 (5) ◽  
pp. 2754-2756 ◽  
Author(s):  
Pradip Dutta ◽  
George A. Candela ◽  
Deane Chandler‐Horowitz ◽  
J. F. Marchiando ◽  
Martin C. Peckerar
Keyword(s):  
Silicon On Insulator ◽  
Oxygen Ion ◽  
Nondestructive Characterization ◽  
Ion Implanted

Formation and nondestructive characterization of ion implanted silicon‐on‐insulator layers

1987 ◽  
Vol 51 (5) ◽  
pp. 343-345 ◽  
Author(s):  
J. Narayan ◽  
S. Y. Kim ◽  
K. Vedam ◽  
R. Manukonda
Keyword(s):  
Silicon On Insulator ◽  
Insulator Layers ◽  
Nondestructive Characterization ◽  
Ion Implanted

Formation And Nondestructive Characterization Of Ion Implanted Soi Layers

1987 ◽  
Author(s):  
J. Narayan ◽  
M. El Ghor ◽  
S. Y. Kim ◽  
K. Vedam ◽  
R. Manukonda ◽  
...  
Keyword(s):  
Nondestructive Characterization ◽  
Ion Implanted

scholarly journals Nondestructive characterization of nitrogen‐implanted silicon‐on‐insulator structures by spectroscopic ellipsometry

1989 ◽  
Vol 66 (10) ◽  
pp. 5052-5057 ◽  
Author(s):  
M. Fried ◽  
T. Lohner ◽  
J. M. M. de Nijs ◽  
A. van Silfhout ◽  
L. J. Hanekamp ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Silicon On Insulator ◽  
Nondestructive Characterization

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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