Use of a GaAsSb buffer layer for the formation of small, uniform, and dense InAs quantum dots

2010 ◽  
Vol 96 (18) ◽  
pp. 183101 ◽  
Author(s):  
Keun-Yong Ban ◽  
Stephen P. Bremner ◽  
Guangming Liu ◽  
Som N. Dahal ◽  
Patricia C. Dippo ◽  
...  
2009 ◽  
Vol 20 (30) ◽  
pp. 305301 ◽  
Author(s):  
Y Wang ◽  
J Zou ◽  
Z M Zhao ◽  
Z Hao ◽  
K L Wang

2009 ◽  
Vol 95 (24) ◽  
pp. 243106 ◽  
Author(s):  
T. J. Pfau ◽  
A. Gushterov ◽  
J. P. Reithmaier ◽  
I. Cestier ◽  
G. Eisenstein ◽  
...  

2008 ◽  
Vol 310 (23) ◽  
pp. 5085-5088 ◽  
Author(s):  
R. Suzuki ◽  
T. Miyamoto ◽  
T. Sengoku ◽  
F. Koyama

2005 ◽  
Vol 475-479 ◽  
pp. 1791-1794
Author(s):  
G.X. Shi ◽  
Bo Xu ◽  
P. Jin ◽  
X.L. Ye ◽  
C.X. Cui ◽  
...  

The structural and photoluminescence (PL) properties of the InAs quantum dots (QDs) grown on a combined InAlAs and GaAs strained buffer layer have been investigated by AFM and PL measurements. The dependence of the critical thickness for the transition from 2D to 3D on the thickness of GaAs layer is demonstrated directly by RHEED. The effects of the introduced-InAlAs layer on the density and the aspect ratio of QDs have been discussed.


2001 ◽  
Vol 223 (4) ◽  
pp. 450-455 ◽  
Author(s):  
Hyo Jin Kim ◽  
Young Ju Park ◽  
Eun Kyu Kim ◽  
Tae Whan Kim

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