Temperature Dependent Photoluminescence of Self-Organized InAs Quantum Dots on an InGaAs Strain Buffer Layer Grown by MOCVD

2007 ◽  
Vol 10 (6) ◽  
pp. H181 ◽  
Author(s):  
Kun-Fu Huang ◽  
Feng-Ming Lee ◽  
Chih-Wei Hu ◽  
Te-Chin Peng ◽  
Meng-Chyi Wu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Buffer Layer ◽  
Temperature Dependent ◽  
Inas Quantum Dots ◽  
Self Organized ◽  
Temperature Dependent Photoluminescence

scholarly journals Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots

2015 ◽  
Author(s):  
Ming Xu ◽  
Alexandre Jaffré ◽  
José Alvarez ◽  
Jean-Paul Kleider ◽  
Apichat Jittrong ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Temperature Dependent ◽  
Inas Quantum Dots ◽  
Temperature Dependent Photoluminescence

scholarly journals Temperature-dependent photoluminescence of In0.5Al0.5As/Al0.25Ga0.75As self-organized quantum dots

1999 ◽  
Vol 85 (5) ◽  
pp. 2997-2999 ◽  
Author(s):  
J. Phillips ◽  
K. Kamath ◽  
P. Bhattacharya ◽  
U. Venkateswaran
Keyword(s):  
Quantum Dots ◽  
Temperature Dependent ◽  
Self Organized ◽  
Temperature Dependent Photoluminescence

Effects of a InGaAs Strained Layer on Structures and Photoluminescence Characteristics of InAs Quantum Dots

2010 ◽  
Vol 148-149 ◽  
pp. 897-902
Author(s):  
Jian Ming Yao ◽  
Ling Min Kong ◽  
Shi Lai Wang
Keyword(s):  
Quantum Dots ◽  
Integral Intensity ◽  
Wetting Layer ◽  
Ingaas Layer ◽  
Temperature Dependent ◽  
Inas Quantum Dots ◽  
Strained Layer ◽  
Gaas Matrix ◽  
Electronic Microscope ◽  
Temperature Dependent Photoluminescence

The influences of a thin InGaAs layer grown on GaAs(100) substrate before deposited InAs self-assembled quantum dots(SAQDs) were experimentally investigated. Scanning electronic microscope (SEM) measurements show that the InGaAs strained layer may release the strain between wetting layer and QDs, and then enlarge size of QDs. When the thickness of InAs layer is small, the QDs are chained. Temperature dependent photoluminescence (TDPL) measurements show that the PL peaks of InAs QDs with In0.1Ga0.9As show much more red shift compared with the QDs directly deposited on GaAs matrix, and PL integral intensity enhances as T rises from 50K to 90K. We attribute this enhancement to the small potential barrier between WL and QDs produced by the InGaAs stained layer.

scholarly journals Temperature-dependent photoluminescence of InAs quantum dots Grown on Silicon

2021 ◽  
Vol 1907 (1) ◽  
pp. 012030
Author(s):  
Lijuan Yao ◽  
Bowen Zhang ◽  
Xuan Fang ◽  
Bobo Li ◽  
Mukfung Yuen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Temperature Dependent ◽  
Inas Quantum Dots ◽  
Temperature Dependent Photoluminescence

Temperature-dependent photoluminescence from type-II InSb∕InAs quantum dots

2006 ◽  
Vol 99 (9) ◽  
pp. 093517 ◽  
Author(s):  
O. G. Lyublinskaya ◽  
V. A. Solov’ev ◽  
A. N. Semenov ◽  
B. Ya. Meltser ◽  
Ya. V. Terent’ev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Type Ii ◽  
Temperature Dependent ◽  
Inas Quantum Dots ◽  
Temperature Dependent Photoluminescence

Uniform formation process of self-organized InAs quantum dots

2002 ◽  
Vol 237-239 ◽  
pp. 1301-1306 ◽  
Author(s):  
Koichi Yamaguchi ◽  
Toshiyuki Kaizu ◽  
Kunihiko Yujobo ◽  
Yoshikuni Saito
Keyword(s):  
Quantum Dots ◽  
Formation Process ◽  
Inas Quantum Dots ◽  
Self Organized

Temperature-Dependent Photoluminescence Spectra of PbSe Quantum Dots for Temperature Markers

2012 ◽  
Vol 482-484 ◽  
pp. 2547-2550
Author(s):  
Peng Fei Gu ◽  
Ya Nan Wang ◽  
Jia Jia Cao ◽  
Yu Yan ◽  
Tie Qiang Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Temperature Sensitivity ◽  
Peak Position ◽  
Strong Temperature Dependence ◽  
Photoluminescence Spectra ◽  
Temperature Dependent ◽  
Temperature Variations ◽  
Temperature Changes ◽  
Optical Readout ◽  
Temperature Dependent Photoluminescence

We here report the temperature effect on photoluminescence(PL) spectra of PbSe quantum dots (QDs), which exhibit a strong temperature dependence on their spectra position and intensity. They potentially act as the temperature marker, sensing temperature variations and reporting temperature changes remotely through optical readout. In addition, the temperature sensitivity characterized by peak position of PbSe QDs was found to be 0.39nm/°C in a range of 10-100 °C.

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