Site-controlled InAs quantum dots grown on a 55 nm thick GaAs buffer layer

2009 ◽  
Vol 95 (24) ◽  
pp. 243106 ◽  
Author(s):  
T. J. Pfau ◽  
A. Gushterov ◽  
J. P. Reithmaier ◽  
I. Cestier ◽  
G. Eisenstein ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Buffer Layer ◽  
Inas Quantum Dots ◽  
Gaas Buffer Layer

High quality InAs quantum dots grown on patterned Si with a GaAs buffer layer

2009 ◽  
Vol 20 (30) ◽  
pp. 305301 ◽  
Author(s):  
Y Wang ◽  
J Zou ◽  
Z M Zhao ◽  
Z Hao ◽  
K L Wang
Keyword(s):  
Quantum Dots ◽  
Buffer Layer ◽  
High Quality ◽  
Inas Quantum Dots ◽  
Gaas Buffer Layer

Size control of InAs quantum dots on 2°-off GaAs (100) substrate by the thickness of GaAs buffer layer

2001 ◽  
Vol 223 (4) ◽  
pp. 450-455 ◽  
Author(s):  
Hyo Jin Kim ◽  
Young Ju Park ◽  
Eun Kyu Kim ◽  
Tae Whan Kim
Keyword(s):  
Quantum Dots ◽  
Buffer Layer ◽  
Size Control ◽  
Inas Quantum Dots ◽  
Gaas Buffer Layer

Optical properties of InAs quantum dots grown on patterned Si with a thin GaAs buffer layer

2008 ◽  
Vol 92 (8) ◽  
pp. 083111 ◽  
Author(s):  
Zuoming Zhao ◽  
Zhibiao Hao ◽  
Kameshwar Yadavalli ◽  
Kang L. Wang ◽  
Ajey P. Jacob
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Buffer Layer ◽  
Inas Quantum Dots ◽  
Gaas Buffer Layer

Role of As in the Anisotropic Positioning of Self-Assembled InAs Quantum Dots

2013 ◽  
Vol 1551 ◽  
pp. 3-9
Author(s):  
Fabrizio Arciprete ◽  
Ernesto Placidi ◽  
Rita Magri ◽  
Massimo Fanfoni ◽  
Adalberto Balzarotti ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam ◽  
High Growth ◽  
Inas Quantum Dots ◽  
Potential Applications ◽  
Gaas Buffer Layer ◽  
Image Position ◽  
Pulsed Deposition ◽  
Deposition Mode

ABSTRACTProgress in tailoring the size, shape and positioning of Quantum Dots on the substrate is crucial for their potential applications in new optoelectronic devices for nano-photonics as well as in quantum information and computation. Using Molecular Beam Epitaxy in pulsed deposition mode we demonstrate that the nucleation of InAs Quantum Dots can be selectively guided on the GaAs(001) surface by a suitable choice of the kinetic parameters for the growth of both the GaAs buffer layer and the InAs Quantum Dots. By developing a two-species rate-equation kinetic model we show that the positioning of the Quantum Dots on only one side of mounds of the GaAs buffer can be traced back to the very small As flux gradient between the two mound slopes $\left( {\Delta F_A /F_A \approx 1 - 5\% } \right)$ caused by the proper tilting of the incoming As flux. Such gradient originates, at the relatively high growth-temperature, a net cation flow from one slope of the mound to the other that is responsible for the selective growth.

Evidence of coupling between InAs self-assembled quantum dots in thin GaAs buffer layer

2005 ◽  
Vol 26 (1-4) ◽  
pp. 276-280 ◽  
Author(s):  
E.T. Cho ◽  
H.D. Lee ◽  
D.W. Lee ◽  
J.I. Lee ◽  
S.I. Jung ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Buffer Layer ◽  
Gaas Buffer Layer ◽  
Self Assembled

Use of a GaAsSb buffer layer for the formation of small, uniform, and dense InAs quantum dots

2010 ◽  
Vol 96 (18) ◽  
pp. 183101 ◽  
Author(s):  
Keun-Yong Ban ◽  
Stephen P. Bremner ◽  
Guangming Liu ◽  
Som N. Dahal ◽  
Patricia C. Dippo ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Buffer Layer ◽  
Inas Quantum Dots

GaAs buffer layer morphology and lateral distributions of InGaAs quantum dots

2005 ◽  
Vol 23 (3) ◽  
pp. 1226 ◽  
Author(s):  
A. Roshko ◽  
T. E. Harvey ◽  
S. Y. Lehman ◽  
R. P. Mirin ◽  
K. A. Bertness ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Buffer Layer ◽  
Gaas Buffer Layer
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