Cross‐sectional transmission electron microscope study of intrinsic solid‐phase epitaxial growth in self‐ion‐implanted (001) Si

C. W. Nieh; L. J. Chen

doi:10.1063/1.340091

Cross‐sectional transmission electron microscope study of intrinsic solid‐phase epitaxial growth in self‐ion‐implanted (001) Si

Journal of Applied Physics ◽

10.1063/1.340091 ◽

1988 ◽

Vol 63 (2) ◽

pp. 575-577 ◽

Cited By ~ 4

Author(s):

C. W. Nieh ◽

L. J. Chen

Keyword(s):

Electron Microscope ◽

Epitaxial Growth ◽

Transmission Electron Microscope ◽

Microscope Study ◽

Electron Microscope Study ◽

Solid Phase ◽

Cross Sectional ◽

Transmission Electron ◽

Transmission Electron Microscope Study ◽

Ion Implanted

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Cross-sectional transmission electron microscope study of intrinsic solid-phase epitaxial growth in self-ion-implanted (001) Si

Vacuum ◽

10.1016/0042-207x(89)90863-4 ◽

1989 ◽

Vol 39 (10) ◽

pp. 986

Keyword(s):

Electron Microscope ◽

Epitaxial Growth ◽

Transmission Electron Microscope ◽

Microscope Study ◽

Electron Microscope Study ◽

Solid Phase ◽

Cross Sectional ◽

Transmission Electron ◽

Transmission Electron Microscope Study ◽

Ion Implanted

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Cross‐sectional transmission electron microscope study of solid phase epitaxial growth in BF+2‐implanted (001)Si

Journal of Applied Physics ◽

10.1063/1.337609 ◽

1986 ◽

Vol 60 (10) ◽

pp. 3546-3549 ◽

Cited By ~ 21

Author(s):

C. W. Nieh ◽

L. J. Chen

Keyword(s):

Electron Microscope ◽

Epitaxial Growth ◽

Transmission Electron Microscope ◽

Microscope Study ◽

Electron Microscope Study ◽

Solid Phase ◽

Cross Sectional ◽

Transmission Electron ◽

Transmission Electron Microscope Study

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Transmission electron microscope study of ion beam annealing effects of ion‐implanted and evaporated amorphous silicon

Journal of Applied Physics ◽

10.1063/1.329150 ◽

1981 ◽

Vol 52 (5) ◽

pp. 3304-3309 ◽

Cited By ~ 6

Author(s):

L. J. Chen ◽

Y. J. Wu ◽

Y. C. Yang ◽

K. P. Hsieh ◽

M. S. Lin ◽

...

Keyword(s):

Electron Microscope ◽

Amorphous Silicon ◽

Transmission Electron Microscope ◽

Microscope Study ◽

Electron Microscope Study ◽

Ion Beam ◽

Transmission Electron ◽

Annealing Effects ◽

Transmission Electron Microscope Study ◽

Ion Implanted

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Cross-sectional High-Resolution Transmission Electron Microscope Study of Heteroepitaxial Diamond Film Grown on Pt Substrate

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.2298 ◽

1997 ◽

Vol 36 (Part 1, No. 4A) ◽

pp. 2298-2302 ◽

Cited By ~ 8

Author(s):

Guofu Zhou ◽

Masayoshi Tarutani ◽

Yoshizo Takai ◽

Ryuichi Shimizu

Keyword(s):

Electron Microscope ◽

High Resolution ◽

Transmission Electron Microscope ◽

Diamond Film ◽

Microscope Study ◽

Electron Microscope Study ◽

Cross Sectional ◽

Transmission Electron ◽

Transmission Electron Microscope Study

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Cross‐sectional transmission electron microscope study of residual defects in BF+2implanted (111) Si

Journal of Applied Physics ◽

10.1063/1.339079 ◽

1987 ◽

Vol 62 (11) ◽

pp. 4421-4425 ◽

Cited By ~ 14

Author(s):

C. W. Nieh ◽

L. J. Chen

Keyword(s):

Electron Microscope ◽

Transmission Electron Microscope ◽

Microscope Study ◽

Electron Microscope Study ◽

Cross Sectional ◽

Transmission Electron ◽

Transmission Electron Microscope Study

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Cross-Sectional Transmission Electron Microscope Study of Bf2+-Implanted (001) and (111) Silicon

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.1-2.45 ◽

1991 ◽

Vol 1-2 ◽

pp. 45-58 ◽

Cited By ~ 6

Author(s):

Lih Juann Chen ◽

C.W. Nieh ◽

Chih Hsing Chu

Keyword(s):

Electron Microscope ◽

Transmission Electron Microscope ◽

Microscope Study ◽

Electron Microscope Study ◽

Cross Sectional ◽

Transmission Electron ◽

Transmission Electron Microscope Study

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5226. Transmission electron microscope study of ion beam annealing effects of ion-implanted and evaporated amorphous silicon

Vacuum ◽

10.1016/0042-207x(82)94259-2 ◽

1982 ◽

Vol 32 (7) ◽

pp. 458

Keyword(s):

Electron Microscope ◽

Amorphous Silicon ◽

Transmission Electron Microscope ◽

Microscope Study ◽

Electron Microscope Study ◽

Ion Beam ◽

Transmission Electron ◽

Annealing Effects ◽

Transmission Electron Microscope Study ◽

Ion Implanted

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Cross‐sectional transmission electron microscope study of the growth kinetics of hexagonal MoSi2on (001)Si

Journal of Applied Physics ◽

10.1063/1.337982 ◽

1987 ◽

Vol 61 (6) ◽

pp. 2218-2223 ◽

Cited By ~ 34

Author(s):

J. Y. Cheng ◽

H. C. Cheng ◽

L. J. Chen

Keyword(s):

Electron Microscope ◽

Transmission Electron Microscope ◽

Growth Kinetics ◽

Microscope Study ◽

Electron Microscope Study ◽

Cross Sectional ◽

Transmission Electron ◽

Transmission Electron Microscope Study ◽

Kinetics Of

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Cross‐sectional transmission electron microscope study of residual defects in BF+2‐implanted (001)Si

Journal of Applied Physics ◽

10.1063/1.337722 ◽

1986 ◽

Vol 60 (9) ◽

pp. 3114-3119 ◽

Cited By ~ 37

Author(s):

C. W. Nieh ◽

L. J. Chen

Keyword(s):

Electron Microscope ◽

Transmission Electron Microscope ◽

Microscope Study ◽

Electron Microscope Study ◽

Cross Sectional ◽

Transmission Electron ◽

Transmission Electron Microscope Study

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A scanning and transmission electron microscope study of the human minor salivary glands

Archives of Oral Biology ◽

10.1016/s0003-9969(99)00046-1 ◽

1999 ◽

Vol 44 ◽

pp. S27-S31 ◽

Cited By ~ 22

Author(s):

A Riva

Keyword(s):

Electron Microscope ◽

Salivary Glands ◽

Transmission Electron Microscope ◽

Microscope Study ◽

Electron Microscope Study ◽

Minor Salivary Glands ◽

Transmission Electron ◽

Transmission Electron Microscope Study

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