Doping Dependence of Photoluminescence Properties of In0.53Ga0.47As/GaAS0.5Sb0.5 Type II Multiple Quantum Well Structures Grown by Molecular Beam Epitaxy.

Hideki TAKASAKI; Yuichi KAWAMURA; Takahiro KATAYAMA; Akiko YAMAMOTO; Naohisa INOUE

doi:10.3131/jvsj.43.280

Doping Dependence of Photoluminescence Properties of In0.53Ga0.47As/GaAS0.5Sb0.5 Type II Multiple Quantum Well Structures Grown by Molecular Beam Epitaxy.

Shinku ◽

10.3131/jvsj.43.280 ◽

2000 ◽

Vol 43 (3) ◽

pp. 280-283

Author(s):

Hideki TAKASAKI ◽

Yuichi KAWAMURA ◽

Takahiro KATAYAMA ◽

Akiko YAMAMOTO ◽

Naohisa INOUE

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Type Ii ◽

Photoluminescence Properties ◽

Quantum Well Structures ◽

Doping Dependence

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Type I/Type II Transition in InGaAlAs/InP Multiple Quantum Well Structures Grown by Gas Source Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.l79 ◽

1994 ◽

Vol 33 (Part 2, No. 1B) ◽

pp. L79-L82 ◽

Cited By ~ 13

Author(s):

Yuichi Kawamura ◽

Hideki Kobayashi ◽

Hidetoshi Iwamura

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Type I ◽

Type Ii ◽

Quantum Well Structures ◽

Gas Source

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InGaAsP/InAlAs type I/type II multiple quantum well structures grown by gas source molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80279-l ◽

1995 ◽

Vol 150 ◽

pp. 597-601 ◽

Cited By ~ 6

Author(s):

Yuichi Kawamura ◽

Hidetoshi Iwamura

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Type I ◽

Type Ii ◽

Quantum Well Structures ◽

Gas Source

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Properties of In0.53Ga0.47As/GaAs0.5Sb0.5 type II multiple quantum well structures grown on (111)B InP substrates by molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/s0022-0248(02)01436-7 ◽

2002 ◽

Vol 243 (1) ◽

pp. 8-12

Author(s):

T Higashino ◽

Y Kawamura ◽

M Fujimoto ◽

M Amano ◽

T Yokoyama ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Type Ii ◽

Quantum Well Structures ◽

Inp Substrates

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Raman scattering from GaAs/AlGaAs multiple quantum well structures grown by two-step molecular beam epitaxy

Current Applied Physics ◽

10.1016/j.cap.2016.12.023 ◽

2017 ◽

Vol 17 (3) ◽

pp. 398-402 ◽

Cited By ~ 5

Author(s):

Taegeon Lee ◽

Heesuk Rho ◽

Jin Dong Song ◽

Won Jun Choi

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Raman Scattering ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Structures

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Strain-compensations for interfacial strain and average strain in InGaAs/InAIP highly compressive-strained multiple quantum well structures on InP grown by gas source molecular beam epitaxy

Control of Semiconductor Interfaces ◽

10.1016/b978-0-444-81889-8.50016-x ◽

1994 ◽

pp. 69-73

Author(s):

K. Naniwae ◽

S. Sugou ◽

T. Anan

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Average Strain ◽

Quantum Well Structures ◽

Gas Source ◽

Interfacial Strain

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Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire

Applied Physics Letters ◽

10.1063/1.3373834 ◽

2010 ◽

Vol 96 (14) ◽

pp. 141112 ◽

Cited By ~ 45

Author(s):

V. N. Jmerik ◽

A. M. Mizerov ◽

A. A. Sitnikova ◽

P. S. Kop’ev ◽

S. V. Ivanov ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Structures ◽

Low Threshold

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Molecular beam epitaxy grown InGaN multiple quantum well structures optimized using in situ cathodoluminescence

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590001 ◽

1998 ◽

Vol 16 (3) ◽

pp. 1286 ◽

Cited By ~ 11

Author(s):

J. M. Van Hove

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Structures

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InGaAlAs/InAlAs multiple quantum well structures grown by molecular beam epitaxy for long-wavelength infrared detection

10.1117/12.369396 ◽

1999 ◽

Author(s):

Dao Hua Zhang ◽

W. M. Zhang ◽

P. H. Zhang ◽

T. Osotchan ◽

Soon Fatt Yoon ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Infrared Detection ◽

Multiple Quantum ◽

Quantum Well Structures ◽

Long Wavelength ◽

Long Wavelength Infrared

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Recombination Processes in Doped CdTe/CdMnTe Multiple Quantum Well Structures Grown by Molecular Beam Epitaxy

Acta Physica Polonica A ◽

10.12693/aphyspola.92.757 ◽

1997 ◽

Vol 92 (4) ◽

pp. 757-760

Author(s):

M. Godlewski ◽

T. Wojtowicz ◽

G. Karczewski ◽

J. Kossut ◽

J.P. Bergman ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Structures ◽

Recombination Processes

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Determination of the indices of refraction of molecular-beam-epitaxy-grown ZnSe/ZnCdSe multiple-quantum-well structures

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1386381 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1497 ◽

Cited By ~ 3

Author(s):

F. C. Peiris ◽

U. Bindley ◽

J. K. Furdyna

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Structures

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