Stability of phase boundaries on thin silicon layers with glass substrates

1987 ◽  
Vol 62 (2) ◽  
pp. 474-480 ◽  
Author(s):  
Costas P. Grigoropoulos ◽  
Richard H. Buckholz ◽  
Gerald A. Domoto
Keyword(s):  
Phase Boundaries ◽  
Glass Substrates ◽  
Thin Silicon

A Thermal Instability in the Laser-Driven Melting and Recrystallization of Thin Silicon Films on Glass Substrates

1987 ◽  
Vol 109 (4) ◽  
pp. 841-847 ◽  
Author(s):  
C. P. Grigoropoulos ◽  
R. H. Buckholz ◽  
G. A. Domoto
Keyword(s):  
Thermal Instability ◽  
Scanning Speed ◽  
Silicon Films ◽  
Temperature Fields ◽  
Linear Perturbation ◽  
Conductive Heat ◽  
Glass Substrates ◽  
Conductive Glass ◽  
Temperature Distributions ◽  
Thin Silicon

This paper develops a conductive heat transfer stability theory for the laser-driven melting and recrystallization of thin silicon films deposited on conductive (glass) substrates. The important parameters are: laser power, laser intensity distribution, and beam scanning speed. Basic state temperature distributions are obtained for straight phase boundaries. These calculated temperature distributions show the origin of instability. A linear perturbation analysis is used to obtain the leading order corrections to the basic-state temperature fields. The perturbation time rate of growth, as a function of the disturbance wavelength, is then predicted.

Growth of spinel into alumina

1987 ◽  
Vol 45 ◽  
pp. 294-295
Author(s):  
Y. Kouh Simpson ◽  
C. B. Carter
Keyword(s):  
Misfit Dislocations ◽  
Phase Boundaries ◽  
Large Rotation ◽  
Alumina Phase ◽  
Metallic Interfaces ◽  
Small Rotation

The structure of spinel/alumina phase boundaries has recently been studied using the selected- area diffraction technique. It has been found that there exist several dominant topotactic relationships; of these, the two most common situations are when the {111} plane of spinel is parallel to either the (0001) plane or the {1120} plane of alumina. In both of these cases, it has been found that there is often a small rotation from exact topotaxy (typically 0° to 2° but with larger rotations possible) which partially eliminates the need for misfit dislocations. This rotation is a special phenomenon that may be unique to non-metallic interfaces such as phase boundaries in ceramics. In this report, a special spinel/alumina interface in which a large rotation from the exact topotaxy exists between the (111) plane of spinel and the (OOOl) plane of alumina is discussed.

The nucleation of cavities at grain boundaries

1987 ◽  
Vol 45 ◽  
pp. 288-291
Author(s):  
P. J. Goodhew
Keyword(s):  
Surface Tension ◽  
Surface Energy ◽  
Grain Boundaries ◽  
Radiation Damage ◽  
Impurity Concentration ◽  
Driving Force ◽  
Nucleation And Growth ◽  
Phase Boundaries ◽  
Cavity Nucleation ◽  
Spherical Bubble

Cavity nucleation and growth at grain and phase boundaries is of concern because it can lead to failure during creep and can lead to embrittlement as a result of radiation damage. Two major types of cavity are usually distinguished: The term bubble is applied to a cavity which contains gas at a pressure which is at least sufficient to support the surface tension (2g/r for a spherical bubble of radius r and surface energy g). The term void is generally applied to any cavity which contains less gas than this, but is not necessarily empty of gas. A void would therefore tend to shrink in the absence of any imposed driving force for growth, whereas a bubble would be stable or would tend to grow. It is widely considered that cavity nucleation always requires the presence of one or more gas atoms. However since it is extremely difficult to prepare experimental materials with a gas impurity concentration lower than their eventual cavity concentration there is little to be gained by debating this point.

Behavior of contact-silicided TFSOI gate structures

1994 ◽  
Vol 52 ◽  
pp. 860-861
Author(s):  
N. David Theodore ◽  
Juergen Foerstner ◽  
Peter Fejes
Keyword(s):  
Semiconductor Device ◽  
Series Resistance ◽  
Field Effect Transistors ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
Continuous Layer ◽  
Buried Oxide ◽  
Device Structures ◽  
Thin Silicon

As semiconductor device dimensions shrink and packing-densities rise, issues of parasitic capacitance and circuit speed become increasingly important. The use of thin-film silicon-on-insulator (TFSOI) substrates for device fabrication is being explored in order to increase switching speeds. One version of TFSOI being explored for device fabrication is SIMOX (Silicon-separation by Implanted OXygen).A buried oxide layer is created by highdose oxygen implantation into silicon wafers followed by annealing to cause coalescence of oxide regions into a continuous layer. A thin silicon layer remains above the buried oxide (~220 nm Si after additional thinning). Device structures can now be fabricated upon this thin silicon layer.Current fabrication of metal-oxidesemiconductor field-effect transistors (MOSFETs) requires formation of a polysilicon/oxide gate between source and drain regions. Contact to the source/drain and gate regions is typically made by use of TiSi2 layers followedby Al(Cu) metal lines. TiSi2 has a relatively low contact resistance and reduces the series resistance of both source/drain as well as gate regions

Lifetime Regime in the Electrically-Detected Transient Grating Method Applied to Amorphous and Microcrystalline Silicon Films

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Sanguino ◽  
M. Niehus ◽  
S. Koynov ◽  
P. Brogueira ◽  
R. Schwarz ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Analytical Calculation ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Dielectric Relaxation Time ◽  
Transient Grating ◽  
Minority Carrier Diffusion Length ◽  
Carrier Recombination ◽  
Thin Silicon ◽  
Good Agreement

AbstractThe minority-carrier diffusion length in thin silicon films can be extracted from the electrically-detected transient grating method, EDTG, by a simple ambipolar analysis only in the case of lifetime dominated carrier transport. If the dielectric relaxation time, τdiel, is larger than the photocarrier response time, τR, then unexpected negative transient signals can appear in the EDTG result. Thin silicon films deposited by hot-wire chemical vapor deposition (HWCVD) near the amorphous-to-microcrystalline transition, where τR varies over a large range, appeared to be ideal candidates to study the interplay between carrier recombination and dielectric response. By modifying the ambipolar description to allow for a time-dependent carrier grating build-up and decay we can obtain a good agreement between analytical calculation and experimental results.

An Study of Influence of Imperfections on the Delamination of Diamond-Like Carbon Films

2002 ◽  
Vol 719 ◽  
Author(s):  
Myoung-Woon Moon ◽  
Kyang-Ryel Lee ◽  
Jin-Won Chung ◽  
Kyu Hwan Oh
Keyword(s):  
Cross Sections ◽  
Focused Ion Beam ◽  
Imaging System ◽  
Ion Beam ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Glass Substrates ◽  
Atomic Force ◽  
Initiation And Propagation

AbstractThe role of imperfections on the initiation and propagation of interface delaminations in compressed thin films has been analyzed using experiments with diamond-like carbon (DLC) films deposited onto glass substrates. The surface topologies and interface separations have been characterized by using the Atomic Force Microscope (AFM) and the Focused Ion Beam (FIB) imaging system. The lengths and amplitudes of numerous imperfections have been measured by AFM and the interface separations characterized on cross sections made with the FIB. Chemical analysis of several sites, performed using Auger Electron Spectroscopy (AES), has revealed the origin of the imperfections. The incidence of buckles has been correlated with the imperfection length.

DEVELOPMENT OF A POROUS CERAMIC-BASED AIR FLOAT PLATFORM FOR LARGE GLASS SUBSTRATES

2011 ◽  
Vol 2 (4) ◽  
pp. 313-321 ◽  
Author(s):  
Yeeu-Chang Lee ◽  
Chin-Chang Yu ◽  
Ruey-Yih Tsai ◽  
Jen-Chung Hsiao ◽  
Ching-Hao Chen ◽  
...  
Keyword(s):  
Porous Ceramic ◽  
Glass Substrates ◽  
Large Glass

Chemical synthesis and study of structural and optoelectronic properties of CdS thin films: Effect of SILAR growth cycles

2015 ◽  
Vol 9 (3) ◽  
pp. 2461-2469
Author(s):  
S. R. Gosavi ◽  
K. B. Chaudhari
Keyword(s):  
Thin Films ◽  
Average Crystallite Size ◽  
X Ray Diffraction ◽  
Silar Method ◽  
Growth Cycles ◽  
Glass Substrates ◽  
Layer Adsorption ◽  
Cds Thin Films ◽  
Structural And Optoelectronic Properties ◽  
Deposited Film

CdS thin films were deposited on glass substrates by using successive ionic layer adsorption and reaction (SILAR) method at room temperature. The effect of SILAR growth cycles on structural, morphological, optical and electrical properties of the films has been studied.  The thickness of the deposited film is measured by employing weight difference method. The X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) studies showed that all the films exhibit polycrystalline nature and are covered well with glass substrates. The values of average crystallite size were found to be 53 nm, 58 nm, 63 nm and 71 nm corresponding to the thin films deposited with 30, 40, 50 and 60 SILAR growth cycles respectively. From the UV–VIS spectra of the deposited thin films, it was seen that both the absorption properties and energy bandgap of the films changes with increasing number of SILAR growth cycles. A decrease of electrical resistivity has been observed with increasing SILAR growth cycle. 

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