Determination of ion implantation damage profiles in III‐V compounds by means of an electrochemical capacitance‐voltage technique

1987 ◽  
Vol 62 (3) ◽  
pp. 813-818 ◽  
Author(s):  
B. Tell ◽  
K. F. Brown‐Goebeler
Keyword(s):  
Ion Implantation ◽  
Electrochemical Capacitance ◽  
Implantation Damage ◽  
Capacitance Voltage

scholarly journals Determination of free hole concentration in ferromagnetic Ga1−xMnxAs using electrochemical capacitance–voltage profiling

2002 ◽  
Vol 81 (5) ◽  
pp. 844-846 ◽  
Author(s):  
K. M. Yu ◽  
W. Walukiewicz ◽  
T. Wojtowicz ◽  
W. L. Lim ◽  
X. Liu ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Electrochemical Capacitance ◽  
Free Hole ◽  
Capacitance Voltage

Determination of Low-Energy Ion Implantation Damage Parameters by an Ellipsometric Method

1995 ◽  
Vol 5 (5) ◽  
pp. 575-584 ◽  
Author(s):  
U. Müller-Jahreis ◽  
P. Thiele ◽  
M. Bouafia ◽  
A. Seghir
Keyword(s):  
Ion Implantation ◽  
Low Energy ◽  
Implantation Damage ◽  
Ellipsometric Method

scholarly journals Техника электрохимического вольт-фарадного профилирования сильно легированных структур с резким профилем распределения примеси

2019 ◽  
Vol 53 (2) ◽  
pp. 281 ◽  
Author(s):  
Д.С. Фролов ◽  
Г.Е. Яковлев ◽  
В.И. Зубков
Keyword(s):  
Ion Implantation ◽  
Doping Profile ◽  
Electrochemical Capacitance ◽  
Optimal Measurement ◽  
Type Silicon ◽  
Capacitance Voltage ◽  
Silicon Structures ◽  
Heavily Doped ◽  
P Type ◽  
Selection Of

AbstractThe specific features of applying electrochemical capacitance–voltage profiling to investigate heavily doped structures with a sharp doping profile are considered. Criteria are presented, and recommendations are given for selection of the optimal measurement parameters, and the necessity of increasing the frequency, at which the capacitance is measured during profiling, is substantiated. The described procedure is considered by the example of profiling p -type silicon structures with ion implantation as well as n -GaAs epitaxial and substrate structures for p HEMT devices.

Determination of the conduction‐band discontinuities of In0.5Ga0.5P/In1−xGaxAs1−yPy by capacitance–voltage analysis

1995 ◽  
Vol 66 (14) ◽  
pp. 1785-1787 ◽  
Author(s):  
Yong‐Hoon Cho ◽  
Kwan‐Shik Kim ◽  
Sang‐Wan Ryu ◽  
Sang‐Ku Kim ◽  
Byung‐Doo Choe ◽  
...  
Keyword(s):  
Conduction Band ◽  
Capacitance Voltage

Scanned Electron Beam Annealing of Boron-Implanted Diodes

1980 ◽  
Vol 1 ◽  
Author(s):  
T. O. Yep ◽  
R. T. Fulks ◽  
R. A. Powell
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Reverse Bias ◽  
Carrier Lifetime ◽  
Reverse Current ◽  
Electrical Activation ◽  
Electrical Characteristics ◽  
Low Resolution ◽  
Implantation Damage ◽  
Dopant Redistribution

ABSTRACTSuccessful annealing of p+ n arrays fabricated by ion-implantation of 11B (50 keV, 1 × 1014 cm-2) into Si (100 has been performed using a broadly rastered, low-resolution (0.25-inch diameter) electron beam. A complete 2" wafer could be uniformly annealed in ≃20 sec with high electrical activation (>75%) and small dopant redistribution (≃450 Å). Annealing resulted In p+n junctions characterized by low reverse current (≃4 nAcm-2 at 5V reverse bias) and higher carrier lifetime (80 μsec) over the entire 2" wafer. Based on the electrical characteristics of the diodes, we estimate that the electron beam anneal was able to remove ion implantation damage and leave an ordered substrate to a depth of 5.5 m below the layer junction.

Characterization of Ion Implantation Damage in Capless Annealed GaAs

1983 ◽  
Vol 27 ◽  
Author(s):  
H. Kanber ◽  
M. Feng ◽  
J. M. Whelan
Keyword(s):  
Ion Implantation ◽  
Annealing Temperature ◽  
Rutherford Backscattering ◽  
Buffer Layers ◽  
Electrical Activation ◽  
Controlled Atmosphere ◽  
Damage Characteristics ◽  
Implantation Damage ◽  
Implantation Process

ABSTRACTArsenic and argon implantation damage is characterized by Rutherford backscattering in GaAs undoped VPE buffer layers grown on Cr-O doped semi-insulating substrates and capless annealed in a H2 −As4 atmosphere provided by AsH3. The damage detected in the RBS channeled spectra varies as a function of the ion mass, the implant depth and the annealing temperature of the stress-free controlled atmosphere technique. This damage is discussed in terms of the stoichiometric disturbances introduced by the implantation process. The as-implanted and annealed damage characteristics of the Ar and As implants are correlated to the electrical activation characteristics of Si and Se implants in GaAs, respectively.

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