Low‐temperature crystallization of hydrogenated amorphous silicon films in contact with evaporated aluminum electrodes

1987 ◽  
Vol 62 (3) ◽  
pp. 837-840 ◽  
Author(s):  
Shin‐ichiro Ishihara ◽  
Masatoshi Kitagawa ◽  
Takashi Hirao
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Low Temperature Crystallization ◽  
Aluminum Electrodes ◽  
Hydrogenated Amorphous ◽  
Temperature Crystallization

Erbium-Doped A-Si:H Films Fabricated by Standard Pecvd Using Metalorganics

1998 ◽  
Vol 507 ◽  
Author(s):  
N.A. Feoktistov ◽  
V.G. Golubev ◽  
A.V. Medvedev ◽  
A.B. Pevtsov
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Dark Conductivity ◽  
Silicon Films ◽  
Conductivity Ratio ◽  
Photoluminescence Spectra ◽  
Light Emitting ◽  
Erbium Doped ◽  
Hydrogenated Amorphous

ABSTRACT1·54 jim light-emitting erbium-doped hydrogenated amorphous silicon films have been fabricated by standard low temperature (200 – 250 °C) PE CVD technique. The films were doped with erbium during the deposition by making use of a new fluorine-containing metalorganic compound Er(HFA)3*DME [where HFA=CF3C(O)CHC(O)CF3, DME=CH3OCH2CH2OCH3]. Photoluminescence spectra of the a-Si(Er):H films were studied within the range 0·6–1·7 pm at both 77 K and 295 K. A photoconductivity was also detected. The photo- to dark conductivity ratio was on the order of 103.

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