Silicide mediated low temperature crystallization of hydrogenated amorphous silicon in contact with aluminum

1995 ◽  
Vol 78 (2) ◽  
pp. 913-918 ◽  
Author(s):  
M. S. Ashtikar ◽  
G. L. Sharma
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Low Temperature Crystallization ◽  
Hydrogenated Amorphous ◽  
Temperature Crystallization

Laser stimulated low-temperature crystallization of amorphous silicon

2006 ◽  
Vol 32 (3) ◽  
pp. 259-261 ◽  
Author(s):  
S. A. Avsarkisov ◽  
Z. V. Jibuti ◽  
N. D. Dolidze ◽  
B. E. Tsekvava
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Low Temperature Crystallization ◽  
Temperature Crystallization

High Performance Hydrogenated Amorphous Silicon n-i-p Photo-diodes on Glass and Plastic Substrates by Low-temperature Fabrication Process

2007 ◽  
Vol 989 ◽  
Author(s):  
Kyung Ho Kim ◽  
Yuriy Vygranenko ◽  
Mark Bedzyk ◽  
Jeff Hsin Chang ◽  
Tsu Chiang Chuang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
High Performance ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Plastic Substrate ◽  
Process Conditions ◽  
Plastic Substrates ◽  
Hydrogenated Amorphous

AbstractWe report on the fabrication and characterization of hydrogenated amorphous silicon (a-Si:H) films and n-i-p photodiodes on glass and PEN plastic substrates using low-temperature (150°C) plasma-enhanced chemical vapor deposition. Process conditions were optimized for the i-a-Si:H material which had a band gap of ~1.73 eV and low density of states (of the order 1015 cm-3). Diodes with 0.5 μm i-layer demonstrate quantum efficiency ~70%. The reverse dark current of the diodes on glass and PEN plastic substrate is ~10-11 and below 10-10 A/cm2, respectively. We discuss the difference in electrical characteristics of n-i-p diodes on glass and PEN in terms of bulk- and interface-state generation currents.

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