Polycrystalline Si thin‐film transistors fabricated at ≤800 °C: Effects of grain size and {110} fiber texture

1987 ◽  
Vol 62 (4) ◽  
pp. 1503-1509 ◽  
Author(s):  
K. T.‐Y. Kung ◽  
R. Reif
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Thin Film Transistors ◽  
Fiber Texture ◽  
Si Thin Film

Poly-Si Thin Film Transistors Fabricated with Rapid Thermal Processing

1993 ◽  
Vol 303 ◽  
Author(s):  
E. Campo ◽  
J.J. Pedroviejo ◽  
E. Scheid ◽  
D. Bielle-Daspet ◽  
A. Yahia Messaoud ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Thermal Processing ◽  
Thin Film Transistors ◽  
Structural Characteristics ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Optical Absorption Coefficient ◽  
Si Thin Film

ABSTRACTIn this work, we studied the rapid crystallization and the rapid tbermal oxidation of amorphous silicon films deposited at 465°C by low-pressure chemical vapor deposition (LPCVD) from disilane. The crystallization is well-controlled and the thermal bugdet is reduced compared to conventional processes. Results concerning the electrical and structural characteristics of poly-Si thin film transistors (TF7) are given. Furthermore, we obtained after plasma hydrogenation better mobilities in the case of rapid thermal processing (RTP) (μp-61 cm2/V.s, VT−8.3 V, subtbreshold slope−-0.8 V/decade, ION/IOFF− 1. 106 for p-type and μn-80 cm2/V.s, VT−3. 7 V, subthreshold slope−1.4 VWdecade, ION/IOFF−5.104 for n-type) compared to conventional processing performed at 600°C. The mobilities are improved by a factor of 2 to 3 despite the smaller grain size in the silicon films. We also showed a correlation between the optical absorption coefficient k (at 405nm) and the mobility wbicb appears not only dependent upon, the grain size but also upon the grain quality (grain boundaries and defects inside the grain).This study shows that the structural and electrical properties of thin-films and oxides fabricated by RTP are at least as good as those obtained by conventional techniques.

Double-metal-gate nanocrystalline Si thin film transistors with flexible threshold voltage controllability

2013 ◽  
Vol 103 (20) ◽  
pp. 203501 ◽  
Author(s):  
Uio-Pu Chiou ◽  
Jia-Min Shieh ◽  
Chih-Chao Yang ◽  
Wen-Hsien Huang ◽  
Yo-Tsung Kao ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Metal Gate ◽  
Si Thin Film ◽  
Nanocrystalline Si

Influence of melt depth in laser crystallized poly-Si thin film transistors

1997 ◽  
Vol 82 (8) ◽  
pp. 4086-4094 ◽  
Author(s):  
S. D. Brotherton ◽  
D. J. McCulloch ◽  
J. P. Gowers ◽  
J. R. Ayres ◽  
M. J. Trainor
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Si Thin Film

Channel doping effects in poly-Si thin film transistors

2005 ◽  
Vol 487 (1-2) ◽  
pp. 242-246 ◽  
Author(s):  
A. Valletta ◽  
L. Mariucci ◽  
A. Bonfiglietti ◽  
G. Fortunato ◽  
S.D. Brotherton
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Doping Effects ◽  
Si Thin Film
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