Misfit dislocation structure at a Si/SixGe1−xstrained‐layer interface

1987 ◽  
Vol 62 (5) ◽  
pp. 1710-1712 ◽  
Author(s):  
Krishna Rajan ◽  
Mike Denhoff
Keyword(s):  
Dislocation Structure ◽  
Misfit Dislocation ◽  
Layer Interface

A study of surface cross-hatch and misfit dislocation structure in grown by chemical beam epitaxy

1995 ◽  
Vol 149 (1-2) ◽  
pp. 1-11 ◽  
Author(s):  
R. Beanland ◽  
M. Aindow ◽  
T.B. Joyce ◽  
P. Kidd ◽  
M. Lourenço ◽  
...  
Keyword(s):  
Dislocation Structure ◽  
Misfit Dislocation ◽  
Chemical Beam Epitaxy

The misfit dislocation structure of an InGaAs/GaAs heterojunction with low misfit

1977 ◽  
Vol 42 (1) ◽  
pp. 117-125 ◽  
Author(s):  
J.S. Ahearn ◽  
C. Laird ◽  
C.A.B. Ball
Keyword(s):  
Dislocation Structure ◽  
Misfit Dislocation

Boron Precipitation and misfit dislocation structure in Si(Ge,B) buried epitaxial layers

1988 ◽  
Vol 46 ◽  
pp. 492-493
Author(s):  
R.R. Kola ◽  
J.B. Posthill ◽  
G.A. Rozgonyi
Keyword(s):  
Dislocation Structure ◽  
Misfit Dislocation ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Chemical System ◽  
Epitaxial Layers ◽  
Lattice Contraction ◽  
Co Doping ◽  
Buried Layers ◽  
P Type

Heavily boron-doped silicon buried epitaxial layers are becoming increasingly important in the fabrication of thin membranes, three dimensional structures in silicon and latch-up free CMOS circuits. Si(Ge,B) co-doping has been utilized to compensate the B-induced lattice contraction in Si and hence buried high conducting layers which are strain-free and lattice matched to the Si substrate have been realized. The utilization of isoelectronic Ge also alters the point defect distribution in silicon resulting in reduced dopant diffusion which is an added advantage in realizing shallow junctions and reduced interfacial transition width in epitaxial layers. This contribution addresses the evolution of misfit dislocation structure and B precipitation behavior in heavily B-doped buried Si epitaxial layers. In addition, the effect of Ge co-doping on B solubility in Si will be discussed.Silicon epitaxial layers were grown at 1080°C by chemical vapor deposition on 4-inch diameter p-type (100) substrates (10 and 0.04 Ω-cm) employing the SiH2Cl2-B2H6-GeH4-H2 chemical system. Single 5 μm thick epilayers and 2 μm buried layers with 4 μm intrinsic cap layers (10 Ω-cm) were grown.

The Effect of The Initial Nucleation Temperature on The Misfit Dislocation Structure of InP-on-GaAs Heterostructures

1992 ◽  
Vol 263 ◽  
Author(s):  
Ferenc Riesz ◽  
G. Radnoczi ◽  
B. Pecz ◽  
K. Rakennus ◽  
T. Hakkarainen ◽  
...  
Keyword(s):  
Dislocation Structure ◽  
Misfit Dislocation ◽  
Strain Relaxation ◽  
Initial Growth ◽  
Misfit Stress ◽  
X Ray ◽  
Transmission Electron ◽  
Initial Nucleation ◽  
Island Type ◽  
Indirect Information

ABSTRACTThe misfit dislocation structure of vicinal InP-on-GaAs heterostructures is studied by transmission electron microscopy (TEM). An island type growth is identified. The misfit stress is not fully relaxed at the interface. X-ray measurements on strain relaxation and epilayer misorientation are also reported, and the latter results are explained with the asymmetric introduction of 6Ø° dislocations at island edges. Comparing the results, it is concluded that x-ray data supply additional, although indirect, information on initial growth which is hardly detectable by TEM.

Misfit dislocation structure and thermal boundary conductance of GaN/AlN interfaces

2021 ◽  
Vol 130 (3) ◽  
pp. 035301
Author(s):  
Jiaqi Sun ◽  
Yang Li ◽  
Yenal Karaaslan ◽  
Cem Sevik ◽  
Youping Chen
Keyword(s):  
Dislocation Structure ◽  
Misfit Dislocation ◽  
Thermal Boundary Conductance

The dislocation structure of a 10° [110] tilt boundary in silicon

1983 ◽  
Vol 41 ◽  
pp. 114-115
Author(s):  
B. Cunningham ◽  
D.G. Ast
Keyword(s):  
Dislocation Structure ◽  
Tilt Angle ◽  
Imaging Technique ◽  
Diamond Lattice ◽  
Tilt Boundary ◽  
Formation Mechanisms ◽  
Diffraction Contrast ◽  
Lattice Fringe ◽  
Tilt Boundaries ◽  
Chemically Vapor Deposited

There have Been a number of studies of low-angle, θ < 4°, [10] tilt boundaries in the diamond lattice. Dislocations with Burgers vectors a/2<110>, a/2<112>, a<111> and a<001> have been reported in melt-grown bicrystals of germanium, and dislocations with Burgers vectors a<001> and a/2<112> have been reported in hot-pressed bicrystals of silicon. Most of the dislocations were found to be dissociated, the dissociation widths being dependent on the tilt angle. Possible dissociation schemes and formation mechanisms for the a<001> and a<111> dislocations from the interaction of lattice dislocations have recently been given.The present study reports on the dislocation structure of a 10° [10] tilt boundary in chemically vapor deposited silicon. The dislocations in the boundary were spaced about 1-3nm apart, making them difficult to resolve by conventional diffraction contrast techniques. The dislocation structure was therefore studied by the lattice-fringe imaging technique.

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