Heterostructure Epitaxy and Devices — HEAD’97
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Published By Springer Netherlands

9780792350132, 9789401150125
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Preparation and Properties of Edge QW Delta Doped InGaAs/GaAs FET

1998 ◽  
pp. 255-258
Author(s):  
M. Bujdák ◽  
T. Lalinský ◽  
R. Harman ◽  
I. Kostič ◽  
P. Hudek ◽  
...  

UV Detectors Based on InGaP

1998 ◽  
pp. 231-234
Author(s):  
R. Kúdela ◽  
P. Eliáš ◽  
M. Kucera ◽  
P. Bönsch ◽  
D. Wüllner ◽  
...  
Keyword(s):  
Uv Detectors

Characterization of InP:Zn Layers by Photoluminescence and Photoelectrochemical C-V Profiling

1998 ◽  
pp. 147-150 ◽  
Author(s):  
V. F. Andrievski ◽  
E. V. Gushchinskaya ◽  
Yu. S. Emelyanenko ◽  
S. A. Malyshev

GaAs and InP on Si with InGaP Buffer Layers

1998 ◽  
pp. 127-130
Author(s):  
H.-H. Wehmann ◽  
D. Fehly ◽  
D. Wüllner ◽  
P. Bönsch ◽  
A. Schlachetzki ◽  
...  
Keyword(s):  
Buffer Layers

MOVPE Growth of InGaP/GaAs Interfaces

1998 ◽  
pp. 123-126 ◽  
Author(s):  
R. Kúdela ◽  
B. Olejníková ◽  
M. Kučera ◽  
S. Hasenöhrl
Keyword(s):  
Movpe Growth
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