Microwave determination of electron-hole recombination dynamics from spontaneous to stimulated emission in a quantum-well microcavity laser

2010 ◽  
Vol 96 (13) ◽  
pp. 131108 ◽  
Author(s):  
C. H. Wu ◽  
H. W. Then ◽  
M. Feng ◽  
N. Holonyak
Keyword(s):  
Quantum Well ◽  
Stimulated Emission ◽  
Electron Hole ◽  
Microcavity Laser ◽  
Hole Recombination ◽  
Recombination Dynamics

Electron-hole recombination in narrow-band-gapHg1−xCdxTe and stimulated emission of LO phonons

1990 ◽  
Vol 42 (6) ◽  
pp. 3620-3627 ◽  
Author(s):  
H. Xie ◽  
L. R. Ram-Mohan ◽  
Peter A. Wolff
Keyword(s):  
Narrow Band ◽  
Stimulated Emission ◽  
Electron Hole ◽  
Hole Recombination

The Possible Mechanism of Excitation of the f - f Emission from Er-O Clusters in Silicon

1996 ◽  
Vol 422 ◽  
Author(s):  
V. F. Masterov ◽  
L. G. Gerchikov
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Forward Bias ◽  
Electron Trap ◽  
Electron Hole ◽  
Electron Level ◽  
Light Emitting ◽  
Trapped Electron ◽  
Hole Recombination

AbstractThe Er2O3 quantum dot (cluster) with dimensions about 1.2nm in silicon is discussed as the possible source of the Er related emission in Si:Er,O, excited by photogenerated carriers or in a light-emitting diodes (LED) at forward bias. This quantum dot is represented as a spherical quantum well 0.9eV in depth. The electron level with energy about 0.15eV below the bottom of the silicon conduction band plays role of an electron trap. The trapped electron interacts with a hole in valence band of silicon forming “indirect” exciton bonded to quantum well. The energy is transferred to f - shell of erbium by the Auger electron - hole recombination.

Kinetics of indirect electron-hole recombination in a wide single quantum well in a strong electric field

JETP Letters ◽  
2006 ◽  
Vol 84 (4) ◽  
pp. 222-225 ◽  
Author(s):  
V. V. Solov’ev ◽  
I. V. Kukushkin ◽  
J. H. Smet ◽  
K. von Klitzing ◽  
W. Dietsche
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Strong Electric Field ◽  
Single Quantum ◽  
Electron Hole ◽  
Single Quantum Well ◽  
Kinetics Of ◽  
Hole Recombination

Spin Polarization of Electrons Injected from Fe into GaAs Quantum Well Characterized using Oblique Hanle Effect

2009 ◽  
Vol 1183 ◽  
Author(s):  
Eiji Wada ◽  
Mitsuru Itoh ◽  
Tomoyasu Taniyama ◽  
Masahito Yamaguchi
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Spin Polarization ◽  
Spin Injection ◽  
Electron Hole ◽  
Hanle Effect ◽  
Spin Depolarization ◽  
Polarization Of Light ◽  
Low Magnetic Field ◽  
Hole Recombination

AbstractWe study spin injection from an in-plane magnetized Fe thin layer into a GaAs/AlGaAs quantum well (QW) in low magnetic fields of ±0.37 T using oblique Hanle effect. An oblique low magnetic field induces the precession of electron spins in the GaAs QW, allowing us to detect the spin polarization of electrons injected across the Fe/AlGaAs interface. Our analysis of the circular polarization of light emitted in the electron-hole recombination process in the QW gives an estimate of the lower bounds of the spin polarization to be 4.0%. Also, a spin lifetime of 140 psec is obtained in this analysis, indicating that spin depolarization at the Fe/AlGaAs interface is more predominant rather than spin relaxation in the QW region.

Electron–hole recombination dynamics in carbon nanodots

Carbon ◽  
2015 ◽  
Vol 95 ◽  
pp. 659-663 ◽  
Author(s):  
Vanthan Nguyen ◽  
Jinhai Si ◽  
Lihe Yan ◽  
Xun Hou
Keyword(s):  
Carbon Nanodots ◽  
Electron Hole ◽  
Hole Recombination ◽  
Recombination Dynamics

scholarly journals Systematic study of carrier correlations in the electron-hole recombination dynamics of quantum dots

2007 ◽  
Vol 76 (16) ◽  
Author(s):  
T. Berstermann ◽  
T. Auer ◽  
H. Kurtze ◽  
M. Schwab ◽  
D. R. Yakovlev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Systematic Study ◽  
Electron Hole ◽  
Hole Recombination ◽  
Recombination Dynamics
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