InGaN gallium nitride light-emitting diodes with reflective electrode pads and textured gallium-doped ZnO contact layer

2010 ◽  
Vol 96 (13) ◽  
pp. 133504 ◽  
Author(s):  
S. H. Tu ◽  
C. J. Lan ◽  
S. H. Wang ◽  
M. L. Lee ◽  
K. H. Chang ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Light Emitting Diodes ◽  
Contact Layer ◽  
Light Emitting ◽  
Doped Zno

Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer

2007 ◽  
Vol 90 (26) ◽  
pp. 263511 ◽  
Author(s):  
Jinn-Kong Sheu ◽  
Y. S. Lu ◽  
Min-Lum Lee ◽  
W. C. Lai ◽  
C. H. Kuo ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Contact Layer ◽  
Light Emitting ◽  
Doped Zno ◽  
Transparent Contact

Remarkable lifetime improvement of quantum-dot light emitting diodes by incorporating rubidium carbonate in metal-oxide electron transport layers

2019 ◽  
Vol 7 (32) ◽  
pp. 10082-10091 ◽  
Author(s):  
Yujin Lee ◽  
Hyo-Min Kim ◽  
Jeonggi Kim ◽  
Jin Jang
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Metal Oxide ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Remarkable Improvement ◽  
Operational Lifetime ◽  
Electron Transporting Layer ◽  
Doped Zno ◽  
Mg Doped

We demonstrated the remarkable improvement of efficiency roll-off and operational lifetime in red quantum dot light emitting diodes (R-QLEDs) by incorporating rubidium carbonate (Rb2CO3) in Mg doped ZnO (MZO) electron transporting layer (ETL).

scholarly journals Numerical Simulation on Electrical-Thermal Properties of Gallium-Nitride-Based Light-Emitting Diodes Embedded in Board

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Xing-ming Long ◽  
Rui-jin Liao ◽  
Jing Zhou
Keyword(s):  
Finite Element ◽  
Gallium Nitride ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Thermal Characteristics ◽  
Junction Temperature ◽  
Current Crowding ◽  
Total Thermal Resistance ◽  
Light Emitting ◽  
Packaging Structure

The electrical-thermal characteristics of gallium-nitride- (GaN-) based light-emitting diodes (LED), packaged by chips embedded in board (EIB) technology, were investigated using a multiphysics and multiscale finite element code, COMSOL. Three-dimensional (3D) finite element model for packaging structure has been developed and optimized with forward-voltage-based junction temperatures of a 9-chip EIB sample. The sensitivity analysis of the simulation model has been conducted to estimate the current and temperature distribution changes in EIB LED as the blue LED chip (substrate, indium tin oxide (ITO)), packaging structure (bonding wire and chip numbers), and system condition (injection current) changed. This method proved the reliability of simulated results in advance and useful material parameters. Furthermore, the method suggests that the parameter match on Shockley's equation parameters, Rs, nideal, and Is, is a potential method to reduce the current crowding effect for the EIB LED. Junction temperature decreases by approximately 3 K to 10 K can be achieved by substrate thinning, ITO, and wire bonding. The nonlinear-decreasing characteristics of total thermal resistance that decrease with an increase in chip numbers are likely to improve the thermal performance of EIB LED modules.

Enhanced Current Transport and Injection in Thin-Film Gallium-Nitride Light-Emitting Diodes by Laser-Based Doping

2014 ◽  
Vol 6 (19) ◽  
pp. 16601-16609 ◽  
Author(s):  
Su Jin Kim ◽  
Kyeong Heon Kim ◽  
Ho Young Chung ◽  
Hee Woong Shin ◽  
Byeong Ryong Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Gallium Nitride ◽  
Light Emitting Diodes ◽  
Current Transport ◽  
Light Emitting
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