Theory of thin‐film orientation by ion bombardment during deposition

1986 ◽  
Vol 60 (12) ◽  
pp. 4160-4164 ◽  
Author(s):  
R. Mark Bradley ◽  
James M. E. Harper ◽  
David A. Smith
Keyword(s):  
Thin Film ◽  
Ion Bombardment

Influence of ion bombardment on structure and properties of TiZrN thin film

2015 ◽  
Vol 354 ◽  
pp. 155-160 ◽  
Author(s):  
Yu-Wei Lin ◽  
Jia-Hong Huang ◽  
Ge-Ping Yu ◽  
Chien-Nan Hsiao ◽  
Fong-Zhi Chen
Keyword(s):  
Thin Film ◽  
Ion Bombardment ◽  
Structure And Properties

Microstructural observation of a composite film of c-BN and h-BN phases

2000 ◽  
Vol 15 (11) ◽  
pp. 2292-2295 ◽  
Author(s):  
Young-Joon Park ◽  
Young-Joon Baik ◽  
Jae Hyoung Choi ◽  
Jeong Yong Lee ◽  
Jun-Hee Hahn
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Composite Film ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Deposition Process ◽  
Microstructural Observation ◽  
Ion Beam Assisted Deposition

BN films consisting of c-BN and h-BN phases were synthesized using an ion-beam-assisted deposition process. In contrast to conventional observations, the c-BN and h-BN phases did not form separate layers, but were distributed in the form of nano-sized grains throughout the film thickness. No distinctly aligned h-BN layer was observed before the c-BN phase. Such a mixed character of the film was attributed to a localized ion bombardment effect instead of the macro-stress. Possibly because of the presence of scattered h-BN phases, the thin film described here possessed a low hardness of about 20 GPa and a low stress of about 5 GPa, compared with other reported c-BN-containing films.

Composite thin‐film production by ion bombardment

1987 ◽  
Vol 5 (4) ◽  
pp. 1250-1253 ◽  
Author(s):  
W. Carr ◽  
M. Seidl ◽  
G. S. Tompa ◽  
A. Souzis
Keyword(s):  
Thin Film ◽  
Ion Bombardment ◽  
Composite Thin Film ◽  
Film Production ◽  
Thin Film Production

INFLUENCE OF SURFACE FREE ENERGY ON ADHESION OF CrN THIN FILM DEPOSITED BY AIP METHOD

2012 ◽  
Vol 06 ◽  
pp. 509-514 ◽  
Author(s):  
HIKARU NOUDA ◽  
HIROATSU ODA ◽  
DAISUKE YONEKURA ◽  
RI-ICHI MURAKAMI
Keyword(s):  
Thin Film ◽  
Free Energy ◽  
Surface Free Energy ◽  
High Speed ◽  
Gas Flow ◽  
Sessile Drop ◽  
Ion Bombardment ◽  
Polar Component ◽  
Scratch Testing ◽  
The Relationship

The purpose of this study is to examine the relationship between adhesion of CrN thin film and the surface free energy of substrate. CrN film was deposited on JIS SKH2 high speed tool steel by arc ion plating (AIP) method. The surface free energy of the substrate was measured with/without ion bombardment process using nitrogen and argon gas under various gas flow rate before CrN deposition. The surface free energy was measured by the sessile drop method using distilled water and methylene iodide. The adhesion was evaluated by scratch testing and the relationship between a critical load and the surface free energy in each ion bombardment condition was discussed. As a result, it was found that the adhesion increased with decreasing the surface free energy, in particular the polar component strongly affects the adhesion.

Novel in-situ Ion Bombardment Process for A Thermally Stable (> 800 °C) Plasma Deposited Dielectric

1999 ◽  
Vol 573 ◽  
Author(s):  
F. Ren ◽  
J. R. Lothian ◽  
S. J. Pearton ◽  
R. G. Wilson ◽  
J. R. LaRoche ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Dielectric Film ◽  
Ion Bombardment ◽  
Film Deposition ◽  
Thermally Stable ◽  
Excellent Thermal Stability ◽  
Sims Analysis ◽  
Continuous Deposition

ABSTRACTWe demonstrated an in-situ dielectric film passivation technique by dividing a thick film deposition into many thin film (<40Å) depositions and incorporating the ion bombardment between the depositions. N2 was used for the plasma treatment to passivate the SiNx film and a well passivated and thermally stable SiNx was achieved with this process. The refractive index of N2 treated SiNx film only changed 0.3% when the SiNx film was heated up to 1000 °C and the film with a continuous deposition showed a 2.5% change. From the results of SIMS analysis, the N2 treated SiNx film showed a excellent thermal stability after heat up to 1000 °C. The etch rates of passivated SiNx film in BOE and diluted HF are ≤40 Å/min which is much slower than that of un-treated SiNx (135 Å/min).

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