Improved Morphology and Performance from Surface Treatments of Naphthalenetetracarboxylic Diimide Bottom Contact Field-Effect Transistors

2009 ◽  
Vol 1 (8) ◽  
pp. 1763-1769 ◽  
Author(s):  
Jia Sun ◽  
Rod Devine ◽  
Bal M. Dhar ◽  
Byung Jun Jung ◽  
Kevin C. See ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Surface Treatments ◽  
Bottom Contact ◽  
And Performance ◽  
Contact Field

Benzo[1,2-b:4,5-b′]dithiophene-based copolymers applied in bottom-contact field-effect transistors

Polymer ◽  
2010 ◽  
Vol 51 (14) ◽  
pp. 3099-3107 ◽  
Author(s):  
Mark A.M. Leenen ◽  
Fabio Cucinotta ◽  
Wojciech Pisula ◽  
Jürgen Steiger ◽  
Ralf Anselmann ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Bottom Contact ◽  
Contact Field

Fabrication and performance of diamond field effect transistors, transfer-doped with vanadium pentoxide

2021 ◽  
Author(s):  
James Weil ◽  
Pankaj B. Shah ◽  
Dmitry A. Ruzmetov ◽  
Mahesh R. Neupane ◽  
Leonard M. De La Cruz ◽  
...  
Keyword(s):  
Vanadium Pentoxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
And Performance

Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors

2021 ◽  
pp. 54-70
Author(s):  
Raj Kumar ◽  
Shashi Bala ◽  
Arvind Kumar
Keyword(s):  
Performance Analysis ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
High Mobility ◽  
Short Channel Effects ◽  
Short Channel ◽  
Comparative Performance ◽  
Channel Effects ◽  
And Performance

To have enhanced drive current and diminish short channel effects, planer MOS transistors have migrated from single-gate devices to three-dimensional multi-gate MOSFETs. The gate-all-around nanowire field-effect transistor (GAA NWFET) and nanotube or double gate-all-around field-effect transistors (DGGA-NTFET) have been proposed to deal with short channel effects and performance relates issues. Nanowire and nanotube-based field-effect transistors can be considered as leading candidates for nanoscale devices due to their superior electrostatic controllability, and ballistic transport properties. In this work, the performance of GAA NWFETs and DGAA-NT FETs will be analyzed and compared. III-V semiconductor materials as a channel will also be employed due to their high mobility over silicon. Performance analysis of junctionless nanowire and nanotube FETs will also be compared and presented.

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