Material properties of high‐quality GaAs epitaxial layers grown on Si substrates

1986 ◽  
Vol 60 (5) ◽  
pp. 1640-1647 ◽  
Author(s):  
R. Fischer ◽  
H. Morkoç ◽  
D. A. Neumann ◽  
H. Zabel ◽  
C. Choi ◽  
...  
Keyword(s):  
Material Properties ◽  
Epitaxial Layers ◽  
High Quality ◽  
Si Substrates

Improvement of the crystallinity of GaN epitaxial layers grown on porous Si (100) layers by using a two-step method

2000 ◽  
Vol 15 (12) ◽  
pp. 2602-2605 ◽  
Author(s):  
T. W. Kang ◽  
S. H. Park ◽  
T. W. Kim
Keyword(s):  
Hall Effect ◽  
High Energy ◽  
Epitaxial Films ◽  
Epitaxial Layers ◽  
Porous Si ◽  
Step Method ◽  
High Quality ◽  
Si Substrates ◽  
Hall Effect Measurements ◽  
Step Growth

A new approach was used for combining GaN and porous Si with the goal of producing high-quality GaN epitaxial layers for optoelectronic integrated circuit devices based on Si substrates. Reflection high-energy electron diffraction (RHEED), x-ray diffraction (XRD), photoluminescence (PL), and Van der Pauw–Hall effect measurements were performed to investigate the structural, optical, and electrical properties of the GaN epitaxial films grown on porous Si(100) by plasma-assisted molecular-beam epitaxy with a two-step method. The RHEED patterns were streaky with clear Kikuchi lines, which was direct evidence for layer-by-layer two-dimensional growth of GaN epitaxial layers on porous Si layers. The XRD curves showed that the grown layers were GaN(0001) epitaxial films. The results of the XRD and the PL measurements showed that the crystallinities of the GaN epilayers grown on porous Si by using a two-step growth were remarkably improved because the porous Si layer reduced the strains in the GaN epilayers by sharing them with the Si substrates. Hall-effect measurements showed that the mobility of the GaN active layer was higher than that of the GaN initial layer. These results indicate that high-quality GaN epitaxial films grown on porous Si(100) by using two-step growth hold promise for potential applications in new kinds of optoelectronic monolithic and ultralarge integrated circuits.

A GeSi-buffer structure for growth of high-quality GaAs epitaxial layers on a Si substrate

2005 ◽  
Vol 34 (1) ◽  
pp. 23-26 ◽  
Author(s):  
Edward Y. Chang ◽  
Tsung-Hsi Yang ◽  
Guangli Luo ◽  
Chun-Yen Chang
Keyword(s):  
Epitaxial Layers ◽  
Si Substrate ◽  
High Quality ◽  
Buffer Structure

Ni∕Al0.2Ga0.8N interfacial reaction and Schottky contact formation using high quality epitaxial layers

2008 ◽  
Vol 103 (5) ◽  
pp. 053708 ◽  
Author(s):  
B. Boudjelida ◽  
I. Gee ◽  
J. Evans-Freeman ◽  
S. A. Clark ◽  
T. G. G. Maffeis ◽  
...  
Keyword(s):  
Interfacial Reaction ◽  
Schottky Contact ◽  
Epitaxial Layers ◽  
High Quality ◽  
Contact Formation

Phase transition and piezoelectricity of sol–gel-processed Sm-doped BiFeO3 thin films on Pt(111)/Ti/SiO2/Si substrates

2015 ◽  
Vol 3 (9) ◽  
pp. 2115-2122 ◽  
Author(s):  
Wei Sun ◽  
Jing-Feng Li ◽  
Qi Yu ◽  
Li-Qian Cheng
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Sol Gel ◽  
Orthorhombic Phase ◽  
High Quality ◽  
Si Substrates ◽  
Bifeo3 Thin Films ◽  
Gel Processing

We prepared high-quality Bi1−xSmxFeO3 films on Pt(111)/Ti/SiO2/Si substrates by sol–gel processing and found rhombohedral–orthorhombic phase transition with enhanced piezoelectricity.

Infrared reflection in the Reststrahlen region of GaN MBE grown epitaxial layers on Si substrates

1999 ◽  
Vol 8 (1) ◽  
pp. 25-28 ◽  
Author(s):  
A. Iller ◽  
W. Jantsch ◽  
J. Marks ◽  
B. Pastuszka ◽  
R. Diduszko ◽  
...  
Keyword(s):  
Epitaxial Layers ◽  
Si Substrates ◽  
Infrared Reflection

Stress Relaxation in Uniquely Oriented SiGe/Si Epitaxial Layers

1999 ◽  
Vol 594 ◽  
Author(s):  
M. E. Ware ◽  
R. J. Nemanich
Keyword(s):  
Stress Relaxation ◽  
Surface Morphology ◽  
Strain Relaxation ◽  
Epitaxial Layers ◽  
Misfit Dislocations ◽  
Strained Layers ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Deposited Films

AbstractThis study explores stress relaxation of epitaxial SiGe layers grown on Si substrates with unique orientations. The crystallographic orientations of the Si substrates used were off-axis from the (001) plane towards the (111) plane by angles, θ = 0, 10, and 22 degrees. We have grown 100nm thick Si(1−x) Ge(x) epitaxial layers with x=0.3 on the Si substrates to examine the relaxation process. The as-deposited films are metastable to the formation of strain relaxing misfit dislocations, and thermal annealing is used to obtain highly relaxed films for comparison. Raman spectroscopy has been used to measure the strain relaxation, and atomic force microscopy has been used to explore the development of surface morphology. The Raman scattering indicated that the strain in the as-deposited films is dependent on the substrate orientation with strained layers grown on Si with 0 and 22 degree orientations while highly relaxed films were grown on the 10 degree substrate. The surface morphology also differed for the substrate orientations. The 10 degree surface is relatively smooth with hut shaped structures oriented at predicted angles relative to the step edges.

Structural, electrical, and optical property studies of indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures

1999 ◽  
Vol 14 (7) ◽  
pp. 2778-2782 ◽  
Author(s):  
M. S. Han ◽  
T. W. Kang ◽  
T. W. Kim
Keyword(s):  
Hall Effect ◽  
Ftir Spectra ◽  
Epitaxial Layers ◽  
High Quality ◽  
Electrical And Optical Properties ◽  
Vacancy Defects ◽  
Transmission Electron ◽  
Hall Effect Measurements ◽  
Transmission Measurements ◽  
Van Der Pauw

Transmission electron microsopy (TEM), Hall effect, and Fourier transform infrared (FTIR) transmission measurements were performed to investigate the structural, electrical, and optical properties of indium-doped Hg0.8Cd0.2Te epitaxial layers grown on Cd0.96Zn0.04Te (211) B substrates by molecular-beam epitaxy. The TEM measurements showed that high-quality Hg0.8Cd0.2Te epitaxial layers with interfacial abruptnesses were grown on the Cd0.96Zn0.04Te substrates. The Van der Pauw Hall effect measurements on typical indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures with a doping concentration of 6 × 1016 cm−3 at 10 K in a magnetic field of 0.5 T yielded a carrier density and a mobility of 2.2 × 1016 cm−3 and 40,000 cm2/V s, respectively. The FTIR spectra showed that the absorption edges of the indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures shifted to a shorter wavelength range than those of the undoped samples, which was caused by the Burstein–Moss effect. The FTIR spectra also showed that the transmittance intensities of the indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures increased compared with those of the undoped heterostructures, which is due to the compensation of the Hg vacancy defects by the indium atoms. These results indicate that the indium-doped Hg0.8Cd0.2Te epitaxial layers were high-quality n-type layers and that p-HgxCd1−xTe epilayers can be grown on indium-doped Hg0.8Cd0.2Te/Cd0.96Zn0.04Te heterostructures for the fabrication of HgxCd1−xTe photoconductors and photodiodes.

Effect of Ge on SiC Film Morphology in SiC/Si Films Grown by MOCVD

1999 ◽  
Vol 572 ◽  
Author(s):  
W. L. Samey ◽  
L. Salamanca-Riba ◽  
P. Zhou ◽  
M. G. Spencer ◽  
C. Taylor ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Two Dimensional ◽  
High Quality ◽  
Flow Rates ◽  
Si Substrates ◽  
Cvd Growth ◽  
Polytype Transformation ◽  
Si Films ◽  
Sic Film ◽  
Sic Films

ABSTRACTSiC/Si films generally contain stacking faults and amorphous regions near the interface. High quality SiC/Si films are especially difficult to obtain since the temperatures usually required to grow high quality SiC are above the Si melting point. We added Ge in the form of GeH2 to the reactant gases to promote two-dimensional CVD growth of SiC films on (111) Si substrates at 1000°C. The films grown with no Ge are essentially amorphous with very small crystalline regions, whereas those films grown with GeH2 flow rates of 10 and 15 sccm are polycrystalline with the 3C structure. Increasing the flow rate to 20 sccm improves the crystallinity and induces growth of 6H SiC over an initial 3C layer. This study presents the first observation of spontaneous polytype transformation in SiC grown on Si by MOCVD.

ANTIPHASE DOMAIN FREE EPITAXIAL GROWTH OF GaAs ON (100)Ge

1985 ◽  
Vol 56 ◽  
Author(s):  
Y. Shinoda ◽  
Y. Ohmachi
Keyword(s):  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Antiphase Domain ◽  
Epitaxial Layers ◽  
High Quality ◽  
Thermal Etching ◽  
Domain Structures ◽  
Homoepitaxial Layers

AbstractHigh-quality single domain GaAs epitaxial layers were successfully grown on (100)Ge substrates. Growth was carried out using conventional metalorganic chemical vapor deposition at atmospheric pressure. Antiphase domain free GaAs epitaxial layers were obtained by thermal etching of the Ge surface just prior to growth. Mosaic surface morphology and antiphase boundaries characteristic of domain structures were completely absent in epi-layers following thermal etching. Photoluminescence revealed that domain free epi-layers exhibited characteristics comparable to those of GaAs homoepitaxial layers.

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