Light emitting diode with MOS structures containing multiple-stacked Si quantum dots
(QDs)/SiO2 was fabricated and the visible-infrared light emission was observed a room temperature
when the negative gate bias exceeded the threshold voltage. The luminescence intensity was
increased linearly with increasing the injected current density. The possible luminescence
mechanism was briefly discussed and the delta P doping was performed to obtain the doped Si QDs
and the improvement of EL intensity was demonstrated.
Nanostructured semiconducting metal oxides such as SnO2, ZnO, TiO2, and CuO have been widely used to fabricate high performance gas sensors. To improve the sensitivity and stability of gas sensors,...
In this research, optoelectronic devices consisted of an infrared light emitting diode and a phototransistor with no special handling or third party-packaging were irradiated to ionizing radiation utilizing x-rays. It was found that the devices under test (DUTs) undergo performance degradation in their functional parameters during exposure to x-rays. These damaging effects are depending on their current drives and also the Total Ionizing Dose (TID) absorbed. The TID effects by x-rays are cumulative and gradually take place throughout the lifecycle of the devices exposed to radiation.
Room-temperature electroluminescence from germanium in an Al_03Ga_07As/Ge heterojunction light-emitting diode by Γ-valley transport