Redistribution of excess Si in chemical vapor deposited WSixfilms upon post‐deposition annealing

1986 ◽  
Vol 60 (8) ◽  
pp. 2835-2841 ◽  
Author(s):  
M. Kottke ◽  
F. Pintchovski ◽  
T. R. White ◽  
P. J. Tobin
Keyword(s):  
Chemical Vapor ◽  
Post Deposition Annealing ◽  
Chemical Vapor Deposited ◽  
Post Deposition

Post-Deposition Annealing and Hydrogenation of Hot-Wire Amorphous and Microcrystalline Silicon Films

1996 ◽  
Vol 452 ◽  
Author(s):  
J. P. Conde ◽  
P. Brogueira ◽  
V. Chu
Keyword(s):  
Electron Cyclotron Resonance ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Hot Wire ◽  
Microcrystalline Silicon ◽  
Post Deposition Annealing ◽  
Ecr Plasma ◽  
Hydrogen Plasmas ◽  
Post Deposition

AbstractAmorphous and microcrystalline silicon films deposited by hot-wire chemical vapor deposition were submitted to thermal annealing and to RF and electron-cyclotron resonance (ECR) hydrogen plasmas. Although the transport properties of the films did not change after these post-deposition treatments, the power density of a Ar+ laser required to crystallize the amorphous silicon films was significantly lowered by the exposure of the films to a hydrogen plasma. This decrease was dependent on the type of hydrogen plasma used, being the strongest for an ECR plasma with the substrate held at a negative bias, followed by an ECR hydrogen plasma with the substrate electrode grounded, and finally by an RF hydrogen plasma.

Epitaxial Realignment of In-Situ Doped Polycrystalline Silicon for Advanced BiCMOS Technologies

1999 ◽  
Vol 587 ◽  
Author(s):  
K. Chang ◽  
S.G. Thomas ◽  
T-C. Lee ◽  
R.B. Gregory ◽  
D. O'meara ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Layer Growth ◽  
Native Oxide ◽  
Post Deposition Annealing ◽  
Si Substrates ◽  
Si Films ◽  
Post Deposition

AbstractIndustrial feasibility of an in-situ-doped (ISD) polycrystalline Si process using chemical vapor deposition for advanced BiCMOS technologies is presented. ISD As-doped amorphous and polycrystalline Si layers have been deposited on Si substrates at 610°C and 660°C, respectively, with the deposition rate varying from 120 to 128Å /minute. Samples are compared on the basis of having been subjected to a substrate preclean prior to deposition using an HF solution and an in-situ H2 bake. TEM micrographs reveal the presence of a thin (10-15 Å) native oxide at the deposited layer/substrate interface for samples not precleaned. This is confirmed for both the amorphous and polycrystalline Si depositions. However, for the 610°C-deposited samples given the substrate preclean, a polycrystalline structure with partial epitaxial layer growth is observed. Twins and stacking faults are found at the poly Si/single crystal Si interface, causing interfacial roughness. Post-deposition annealing of the Si films typically generates grain growth, but RBS-channeling characterization of the annealed Si provides evidence of some recrystallization, the extent of which is affected by the original growth condition. Analysis shows that the amorphous deposition at 610°C results in a mixture of epitaxial and polycrystalline Si. Epitaxial realignment of the polycrystalline Si film by post deposition annealing can result in significantly improved device performance.

Crystallinity and Wet Etch Behavior of HfO2 Films Grown by MOCVD

2003 ◽  
Vol 786 ◽  
Author(s):  
Katherine L. Saenger ◽  
Cyril Cabral ◽  
Paul C. Jamison ◽  
Edward Preisler ◽  
Andrew J. Kellock
Keyword(s):  
Chemical Vapor ◽  
Film Structure ◽  
Wet Etching ◽  
Interface Region ◽  
Organic Chemical ◽  
Post Deposition Annealing ◽  
Metal Organic ◽  
Wet Etch ◽  
Organic Chemical Vapor Deposition ◽  
Post Deposition

ABSTRACTThe crystallinity and wet etching behaviors of ultrathin (<10 nm) HfO2 films grown by metal organic chemical vapor deposition (MOCVD) were examined as a function of deposition temperature, film thickness, and post-deposition annealing. Films 3 nm in thickness deposited at 400 or 500 °C were amorphous as-deposited and slowly etchable in aqueous HF; after annealing at 700 °C, the same films showed some nanocrystallinity and were impervious to HF. However, thicker films grown under the same conditions showed significant crystallinity and were impervious to HF even as-deposited. These observations, in combination with measurements on various samples etched back by an Ar+ ion damage/wet etch process, suggest a film structure comprising an initially amorphous near-interface region capped with a HF-resistant crystalline upper layer. It was found that the initially amorphous near-interface region (the bottom 1–3 nm) of films grown at 500 °C can be induced to at least partially crystallize as the upper part of the film starts becoming crystalline as-deposited, but that this near-interface region remains at least partially amorphous after annealing at 700°C.

scholarly journals Annealing and N2 Plasma Treatment to Minimize Corrosion of SiC-Coated Glass-Ceramics

Materials ◽  
2020 ◽  
Vol 13 (10) ◽  
pp. 2375 ◽  
Author(s):  
Chaker Fares ◽  
Randy Elhassani ◽  
Jessica Partain ◽  
Shu-Min Hsu ◽  
Valentin Craciun ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Photoelectron Spectroscopy ◽  
Glass Ceramics ◽  
Chemical Vapor ◽  
Chemical Durability ◽  
Post Deposition Annealing ◽  
Buffer Solution ◽  
Annealing Step ◽  
Post Deposition ◽  
N2 Plasma

To improve the chemical durability of SiC-based coatings on glass-ceramics, the effects of annealing and N2 plasma treatment were investigated. Fluorapatite glass-ceramic disks were coated with SiC via plasma-enhanced chemical vapor deposition (PECVD), treated with N2 plasma followed by an annealing step, characterized, and then immersed in a pH 10 buffer solution for 30 days to study coating delamination. Post-deposition annealing was found to densify the deposited SiC and lessen SiC delamination during the pH 10 immersion. When the SiC was treated with a N2 plasma for 10 min, the bulk properties of the SiC coating were not affected but surface pores were sealed, slightly improving the SiC’s chemical durability. By combining N2 plasma-treatment with a post-deposition annealing step, film delamination was reduced from 94% to 2.9% after immersion in a pH 10 solution for 30 days. X-ray Photoelectron spectroscopy (XPS) detected a higher concentration of oxygen on the surface of the plasma treated films, indicating a thin SiO2 layer was formed and could have assisted in pore sealing. In conclusion, post-deposition annealing and N2 plasma treatment where shown to significantly improve the chemical durability of PECVD deposited SiC films used as a coating for glass-ceramics.

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

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