Effects of post-deposition annealing on the electrical properties and reliability of ultrathin chemical vapor deposited Ta/sub 2/O/sub 5/ films

1994 ◽  
Vol 15 (8) ◽  
pp. 280-282 ◽  
Author(s):  
L.K. Han ◽  
G.W. Yoon ◽  
D.L. Kwong ◽  
V.K. Mathews ◽  
P.C. Fazan
Keyword(s):  
Electrical Properties ◽  
Chemical Vapor ◽  
Post Deposition Annealing ◽  
Chemical Vapor Deposited ◽  
Post Deposition

Redistribution of excess Si in chemical vapor deposited WSixfilms upon post‐deposition annealing

1986 ◽  
Vol 60 (8) ◽  
pp. 2835-2841 ◽  
Author(s):  
M. Kottke ◽  
F. Pintchovski ◽  
T. R. White ◽  
P. J. Tobin
Keyword(s):  
Chemical Vapor ◽  
Post Deposition Annealing ◽  
Chemical Vapor Deposited ◽  
Post Deposition

scholarly journals High Strength Metallurgical Graphene – Mechanisms of Growth and Properties / Grafen Metalurgiczny O Wysokiej Wytrzymałości – Mechanizmy Wzrostu I Właściwości

2015 ◽  
Vol 60 (4) ◽  
pp. 2535-2542 ◽  
Author(s):  
P. Kula ◽  
W. Szymański ◽  
Ł. Kołodziejczyk ◽  
R. Atraszkiewicz ◽  
K. Dybowski ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Chemical Vapor ◽  
High Strength ◽  
Growth Mechanisms ◽  
Key Factors ◽  
Mechanical And Electrical Properties ◽  
Chemical Vapor Deposited ◽  
Graphene Flakes

In this work, the growth mechanisms of chemical vapor deposited and metallurgical graphene and their selected mechanical and electrical properties were investigated. The study revealed the influence of the growth mechanisms on monoand poly-crystalline nanostructures of synthesized graphene monolayers. The structure of flake boundaries greatly affects both the mechanical and electrical properties. The key factors are overlapping of the graphene flakes, their degree of mismatch and the presence of π type bonds. All of these issues should be taken into account when developing industrially scaled technologies for graphene manufacturing.

Effects of Post-Deposition Annealing on the Electrical Properties of HfSiO Films Grown by Atomic Layer Deposition

2005 ◽  
Vol 44 (4B) ◽  
pp. 2230-2234 ◽  
Author(s):  
Hag-Ju Cho ◽  
Hye Lan Lee ◽  
Hong Bae Park ◽  
Taek Soo Jeon ◽  
Seong Geon Park ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Post Deposition Annealing ◽  
Layer Deposition ◽  
Post Deposition

Effects of post deposition annealing atmosphere on interfacial and electrical properties of HfO2/Ge3N4 gate stacks

2019 ◽  
Vol 675 ◽  
pp. 16-22 ◽  
Author(s):  
Kumar Mallem ◽  
S.V. Jagadeesh Chandra ◽  
Minkyu Ju ◽  
Subhajit Dutta ◽  
Swagata Phanchanan ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Annealing Atmosphere ◽  
Gate Stacks ◽  
Post Deposition Annealing ◽  
Post Deposition
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