scholarly journals Unusual field and temperature dependence of the Hall effect in graphene

2007 ◽  
Vol 75 (3) ◽  
Author(s):  
L. A. Falkovsky
Keyword(s):  
Temperature Dependence ◽  
Hall Effect

TEMPERATURE DEPENDENCE OF THE HALL EFFECT IN La2−xSrxCuO4 AND ABa2Cu3O7 (A=Y, Gd) HIGH TEMPERATURE SUPERCONDUCTORS

1987 ◽  
Vol 01 (03n04) ◽  
pp. 1067-1070 ◽  
Author(s):  
M. Petravić ◽  
A. Hamzić ◽  
B. Leontić ◽  
L. Forró
Keyword(s):  
High Temperature ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Normal State ◽  
High Temperature Superconductors ◽  
The Other ◽  
Hall Constant ◽  
High Temperature Superconducting ◽  
Superconducting Ceramics ◽  
Hall Effect Measurements

We present Hall effect measurements in the normal state of the high temperature superconducting ceramics La2−xSrxCuO4 (x=0, 0.1, 0.15, 0.2, 0.25, 0.3), YBa2Cu3o7 and GdBa2Cu3O7 . The first family has temperature independent Hall constant for x>0, while in the other two systems RH is proportional to 1/T. From the Hall effect it follows that the transport in these compounds is hole-like.

scholarly journals Температурная зависимость напряжения, вызванного спиновым током в гетероструктуре манганит/иридат

2021 ◽  
Vol 63 (9) ◽  
pp. 1321
Author(s):  
Т.А. Шайхулов ◽  
К.Л. Станкевич ◽  
К.И. Константинян ◽  
В.В. Демидов ◽  
Г.А. Овсянников
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Ferromagnetic Resonance ◽  
Room Temperature ◽  
Ferromagnetic Layer ◽  
Spin Current ◽  
Epitaxial Thin Film ◽  
Inverse Spin Hall Effect

The temperature dependence of the voltage induced by the spin current was studied in an epitaxial thin-film La0.7Sr0.3MnO3 / SrIrO3 heterostructure deposited on a single-crystal NdGaO3 substrate. The spin current was generated by microwave pumping under conditions of ferromagnetic resonance in the La0.7Sr0.3MnO3 ferromagnetic layer and was detected in the SrIrO3 layer due to inverse spin Hall effect. A significant increase of half-width of the spin current spectrum along with the rise of amplitude of the spin current upon cooling from room temperature (300 K) to 135 K were observed.

scholarly journals Temperature dependence of the breakdown of the quantum Hall effect studied by induced currents

2004 ◽  
Vol 70 (7) ◽  
Author(s):  
A. Matthews ◽  
K. Kavokin ◽  
A. Usher ◽  
M. Portnoi ◽  
M. Zhu ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Induced Currents

Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method

2006 ◽  
Vol 527-529 ◽  
pp. 633-636 ◽  
Author(s):  
Sylvie Contreras ◽  
Marcin Zielinski ◽  
Leszek Konczewicz ◽  
Caroline Blanc ◽  
Sandrine Juillaguet ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Hall Effect ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Temperature Dependent ◽  
Large N ◽  
Hall Effect Measurements ◽  
Van Der Pauw ◽  
P Type ◽  
Made In

We report on investigation of p-type doped, SiC wafers grown by the Modified- Physical Vapor Transport (M-PVT) method. SIMS measurements give Al concentrations in the range 1018 to 1020 cm-3, with weak Ti concentration but large N compensation. To measure the wafers’ resistivity, carrier concentration and mobility, temperature-dependant Hall effect measurements have been made in the range 100-850 K using the Van der Pauw method. The temperature dependence of the mobility suggests higher Al concentration, and higher compensation, than estimated from SIMS. Additional LTPL measurements show no evidence of additional impurities in the range of investigation, but suggest that the additional compensation may come from an increased concentration of non-radiative centers.

Hall effect, anisotropy, and temperature-dependence measurements of1fnoise in silicon on sapphire

1983 ◽  
Vol 28 (4) ◽  
pp. 1935-1943 ◽  
Author(s):  
R. D. Black ◽  
P. J. Restle ◽  
M. B. Weissman
Keyword(s):  
Temperature Dependence ◽  
Hall Effect

Rapid Isothermal Annealing of N-Implanted 6H-SiC Layers Used for Fabrication of p-n Photodiodes

1987 ◽  
Vol 97 ◽  
Author(s):  
Gerhard Pensl ◽  
Reinhard Helbig ◽  
Hong Zhang ◽  
Gonther Ziegler ◽  
Peter Lanig
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Quantum Efficiency ◽  
Isothermal Annealing ◽  
Furnace Annealing ◽  
Hall Effect Measurements

ABSTRACTIon implantation of 14N and Rapid Isothermal Annealing (RIA) were employed to achieve n-type doping in epitaxial-grown 6H-SiC layers. The electrical properties of the implanted films were investigated by Hall effect measurements in order to optimize the annealing parameters. In comparison with standard furnace annealing (1470°C/7min), the annealing parameters for the RIA process could be considerably reduced (1050°C/4min). Based on planar technique, implanted p-n junctions were fabricated. The temperature dependence of I-V characteristics and of the quantum efficiency of photodiodes were studied. The maximum of the quantum efficiency at γ=330 nm reaches values of 35% at 400°C.

Temperature dependence of the anomalous Hall effect in amorphous FexNi80-xB18Si2alloys

1984 ◽  
Vol 14 (12) ◽  
pp. 3023-3030 ◽  
Author(s):  
J Ivkov ◽  
Z Marohnic ◽  
E Babic ◽  
P Dubcek
Keyword(s):  
Temperature Dependence ◽  
Hall Effect ◽  
Anomalous Hall Effect
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