Resistive switching mechanism in delafossite-transition metal oxide (CuInO2–CuO) bilayer structure

2010 ◽  
Vol 107 (10) ◽  
pp. 103703 ◽  
Author(s):  
Deepak Varandani ◽  
Bharti Singh ◽  
Bodh R. Mehta ◽  
Mandeep Singh ◽  
Vidya Nand Singh ◽  
...  
Hyomen Kagaku ◽  
2011 ◽  
Vol 32 (7) ◽  
pp. 422-427
Author(s):  
Takatoshi YODA ◽  
Kentaro KINOSHITA ◽  
Kazufumi DOBASHI ◽  
Kenichi KITAMURA ◽  
Satoru KISHIDA

RSC Advances ◽  
2017 ◽  
Vol 7 (68) ◽  
pp. 43132-43140 ◽  
Author(s):  
Jingxian Li ◽  
Qingxi Duan ◽  
Teng Zhang ◽  
Minghui Yin ◽  
Xinhao Sun ◽  
...  

The existence of rich suboxide phases is favorable for increasing the number of weight states in transition metal oxide synapses.


2013 ◽  
Vol 53 (4) ◽  
pp. 115-120
Author(s):  
B. Long ◽  
S. Mandal ◽  
Y. Li ◽  
W. Chen ◽  
A. El-Amin ◽  
...  

Nanoscale ◽  
2017 ◽  
Vol 9 (36) ◽  
pp. 13449-13456 ◽  
Author(s):  
Xiaohu Wang ◽  
Bin Gao ◽  
Huaqiang Wu ◽  
Xinyi Li ◽  
Deshun Hong ◽  
...  

Resistive switching device with a transparent top electrode and laser excitation of conductive filament consisting of oxygen vacancies have been reported.


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