scholarly journals Tuning analog resistive switching and plasticity in bilayer transition metal oxide based memristive synapses

RSC Advances ◽  
2017 ◽  
Vol 7 (68) ◽  
pp. 43132-43140 ◽  
Author(s):  
Jingxian Li ◽  
Qingxi Duan ◽  
Teng Zhang ◽  
Minghui Yin ◽  
Xinhao Sun ◽  
...  

The existence of rich suboxide phases is favorable for increasing the number of weight states in transition metal oxide synapses.

Hyomen Kagaku ◽  
2011 ◽  
Vol 32 (7) ◽  
pp. 422-427
Author(s):  
Takatoshi YODA ◽  
Kentaro KINOSHITA ◽  
Kazufumi DOBASHI ◽  
Kenichi KITAMURA ◽  
Satoru KISHIDA

2010 ◽  
Vol 107 (10) ◽  
pp. 103703 ◽  
Author(s):  
Deepak Varandani ◽  
Bharti Singh ◽  
Bodh R. Mehta ◽  
Mandeep Singh ◽  
Vidya Nand Singh ◽  
...  

2013 ◽  
Vol 53 (4) ◽  
pp. 115-120
Author(s):  
B. Long ◽  
S. Mandal ◽  
Y. Li ◽  
W. Chen ◽  
A. El-Amin ◽  
...  

Nanoscale ◽  
2019 ◽  
Vol 11 (43) ◽  
pp. 20497-20506 ◽  
Author(s):  
Junjun Wang ◽  
Feng Wang ◽  
Lei Yin ◽  
Marshet Getaye Sendeku ◽  
Yu Zhang ◽  
...  

Nonvolatile resistive random access memories based on synthesized two-dimensional α-MoO3 crystals are demonstrated with high performances.


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