A nondestructive approach to study resistive switching mechanism in metal oxide based on defect photoluminescence mapping

Nanoscale ◽  
2017 ◽  
Vol 9 (36) ◽  
pp. 13449-13456 ◽  
Author(s):  
Xiaohu Wang ◽  
Bin Gao ◽  
Huaqiang Wu ◽  
Xinyi Li ◽  
Deshun Hong ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Laser Excitation ◽  
Conductive Filament ◽  
Switching Device ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism

Resistive switching device with a transparent top electrode and laser excitation of conductive filament consisting of oxygen vacancies have been reported.

Resistive switching mechanism in delafossite-transition metal oxide (CuInO2–CuO) bilayer structure

2010 ◽  
Vol 107 (10) ◽  
pp. 103703 ◽  
Author(s):  
Deepak Varandani ◽  
Bharti Singh ◽  
Bodh R. Mehta ◽  
Mandeep Singh ◽  
Vidya Nand Singh ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Resistive Switching ◽  
Transition Metal Oxide ◽  
Bilayer Structure ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism

A flexible organic memory device with a clearly disclosed resistive switching mechanism

2019 ◽  
Vol 64 ◽  
pp. 209-215 ◽  
Author(s):  
Giulia Casula ◽  
Yan Busby ◽  
Alexis Franquet ◽  
Valentina Spampinato ◽  
Laurent Houssiau ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Device ◽  
Organic Memory ◽  
Switching Mechanism ◽  
Organic Memory Device ◽  
Resistive Switching Mechanism

Using post-breakdown conduction study in a MIS structure to better understand the resistive switching mechanism in an MIM stack

2011 ◽  
Vol 22 (45) ◽  
pp. 455702 ◽  
Author(s):  
Xing Wu ◽  
Kin-Leong Pey ◽  
Nagarajan Raghavan ◽  
Wen-Hu Liu ◽  
Xiang Li ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Mis Structure ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism

Characterization of interfacial barrier charging as a resistive switching mechanism in Ag/Sb2Te3/Ag heterojunctions

2018 ◽  
Vol 20 (27) ◽  
pp. 18200-18206 ◽  
Author(s):  
Xinran Cao ◽  
Caimin Meng ◽  
Jing Li ◽  
Jun Wang ◽  
Yafei Yuan ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Mechanism ◽  
Multilevel Memory ◽  
Resistive Switching Mechanism

The memristive nature of Ag/Sb2Te3/Ag heterostructural cells was systematically characterized and potentially extended to a novel multilevel memory concept.

scholarly journals Biomaterial-Induced Stable Resistive Switching Mechanism in TiO2 Thin Films: The Role of Active Interstitial Sites/Ions in Minimum Current Leakage and Superior Bioactivity

ACS Omega ◽  
2020 ◽  
Vol 5 (30) ◽  
pp. 19050-19060
Author(s):  
Misbah Sehar Abbasi ◽  
Muhammad Sultan Irshad ◽  
Naila Arshad ◽  
Iftikhar Ahmed ◽  
Muhammad Idrees ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Tio2 Thin Films ◽  
Current Leakage ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism

Research on resistive switching mechanism of multi-filaments formation/rupture in nickel oxide thin films

2017 ◽  
Vol 201 ◽  
pp. 169-172 ◽  
Author(s):  
Yuxiang Luo ◽  
Sipei Shao ◽  
Huijun Hu ◽  
Jingjing Li ◽  
Jingshi Shen ◽  
...  
Keyword(s):  
Thin Films ◽  
Nickel Oxide ◽  
Resistive Switching ◽  
Oxide Thin Films ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism ◽  
Nickel Oxide Thin Films
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