ALUMINUM NITRIDE AS A HIGH TEMPERATURE TRANSDUCER

2010 ◽  
Author(s):  
D. A. Parks ◽  
B. R. Tittmann ◽  
M. M. Kropf ◽  
Donald O. Thompson ◽  
Dale E. Chimenti
Keyword(s):  
High Temperature ◽  
Aluminum Nitride ◽  
Temperature Transducer

Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

1999 ◽  
Vol 572 ◽  
Author(s):  
C. M. Lueng ◽  
H. L. W. Chan ◽  
W. K. Fong ◽  
C. Surya ◽  
C. L. Choy
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Composite Film ◽  
High Frequency ◽  
Molecular Beam ◽  
Silicon Substrates ◽  
Heterodyne Interferometer

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

Aluminum Nitride Micro-Channels Grown via Metal Organic Vapor Phase Epitaxy for MEMs Applications

2007 ◽  
Vol 1040 ◽  
Author(s):  
L. E. Rodak ◽  
Sridhar Kuchibhatla ◽  
P. Famouri ◽  
Ting Liu ◽  
D. Korakakis
Keyword(s):  
High Temperature ◽  
Aluminum Nitride ◽  
Silicon Dioxide ◽  
Vapor Phase ◽  
High Energy ◽  
Vapor Phase Epitaxy ◽  
Micro Channel ◽  
Organic Vapor ◽  
Micro Channels ◽  
Metal Organic

AbstractAluminum nitride (AlN) is a promising material for a number of applications due to its temperature and chemical stability. Furthermore, AlN maintains its piezoelectric properties at higher temperatures than more commonly used materials, such as Lead Zirconate Titanate (PZT) [1, 2], making AlN attractive for high temperature micro and nano-electromechanical (MEMs and NEMs) applications including, but not limited to, high temperature sensors and actuators, micro- channels for fuel cell applications, and micromechanical resonators.This work presents a novel AlN micro-channel fabrication technique using Metal Organic Vapor Phase Epitaxy (MOVPE). AlN easily nucleates on dielectric surfaces due to the large sticking coefficient and short diffusion length of the aluminum species resulting in a high quality polycrystalline growth on typical mask materials, such as silicon dioxide and silicon nitride [3,4]. The fabrication process introduced involves partially masking a substrate with a silicon dioxide striped pattern and then growing AlN via MOVPE simultaneously on the dielectric mask and exposed substrate. A buffered oxide etch is then used to remove the underlying silicon dioxide and leave a free standing AlN micro-channel. The width of the channel has been varied from 5 ìm to 110 ìm and the height of the air gap from 130 nm to 800 nm indicating the stability of the structure. Furthermore, this versatile process has been performed on (111) silicon, c-plane sapphire, and gallium nitride epilayers on sapphire substrates. Reflection High Energy Electron Diffraction (RHEED), Atomic Force Microscopy (AFM), and Raman measurements have been taken on channels grown on each substrate and indicate that the substrate is influencing the growth of the AlN micro-channels on the SiO2 sacrificial layer.

Thermally compensated aluminum nitride Lamb wave resonators for high temperature applications

2010 ◽  
Vol 97 (8) ◽  
pp. 083501 ◽  
Author(s):  
Chih-Ming Lin ◽  
Ting-Ta Yen ◽  
Valery V. Felmetsger ◽  
Matthew A. Hopcroft ◽  
Jan H. Kuypers ◽  
...  
Keyword(s):  
High Temperature ◽  
Aluminum Nitride ◽  
Lamb Wave ◽  
Temperature Applications

Raman analysis of aluminum nitride at high temperature

2006 ◽  
Vol 57 (2) ◽  
pp. 105-110 ◽  
Author(s):  
Xiaojun Li ◽  
Candong Zhou ◽  
Guochang Jiang ◽  
Jinglin You
Keyword(s):  
High Temperature ◽  
Aluminum Nitride ◽  
Raman Analysis

High-temperature ionic and electronic resistivity of MgO- and Ta2O5- doped aluminum nitride

2018 ◽  
Vol 72 (1) ◽  
pp. 129-137 ◽  
Author(s):  
Dongsu Yu ◽  
Eunsil Lee ◽  
Sung-Min Lee ◽  
Jong-Young Kim ◽  
Myung Ha Park
Keyword(s):  
High Temperature ◽  
Aluminum Nitride

scholarly journals Characteristic Curves of Iridium-Rhodium Sensing Elements in High-Temperature Transducer Applications

2021 ◽  
Vol 7 (1) ◽  
pp. 62-67
Author(s):  
Vasyl Fedynets ◽  
◽  
Yaroslav Yusyk ◽  
Ihor Vasylkivskyi
Keyword(s):  
High Temperature ◽  
Gas Turbines ◽  
Internal Combustion Engines ◽  
High Reliability ◽  
Characteristic Curve ◽  
Individual Characteristic ◽  
General View ◽  
Temperature Transducer ◽  
Oxidizing Atmosphere ◽  
The Individual

In order to increase the capacity and efficiency factor of gas turbines and internal combustion engines while preserving their high reliability, the gas temperature and its distribution need to be measured in combustion chambers. Values of these temperatures can exceed 1800°С in an oxidizing atmosphere. Therefore, designing temperature transducers for measurements in such severe environments, special attention should be paid to the selection of thermometric materials. The requirements of the necessary accuracy and temperature range over 1800°С in an oxidizing atmosphere are fulfilled only by the temperature transducer based on iridium-rhodium alloys. The characteristic curve of such sensing elements is individual and each temperature transducer is to be calibrated. The paper discusses a technique of determining the individual characteristic curve of iridium-rhodium sensing elements of high-temperature transducers. The preparation steps to be taken prior to the calibration and the main stages of determining the characteristic curve are described. The general view of the experimental set for calibrating the sensing elements is presented. Based on the calibration results, the form of approximating polynomial of the individual characteristic curve is proposed.

High temperature chemical vapor deposition of aluminum nitride, growth and evaluation

2013 ◽  
Vol 230 ◽  
pp. 111-118 ◽  
Author(s):  
M. Pons ◽  
R. Boichot ◽  
N. Coudurier ◽  
A. Claudel ◽  
E. Blanquet ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Aluminum Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor
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