High temperature transducer using aluminum nitride single crystal for laser ultrasound detection

2017 ◽  
Author(s):  
Taeyang Kim ◽  
Jinwook Kim ◽  
Xiaoning Jiang
2010 ◽  
Author(s):  
D. A. Parks ◽  
B. R. Tittmann ◽  
M. M. Kropf ◽  
Donald O. Thompson ◽  
Dale E. Chimenti

Author(s):  
Е.Н. Мохов ◽  
M.К. Рабчинский ◽  
С.С. Нагалюк ◽  
М.Р. Гафуров ◽  
О.П. Казарова

The effect of high-temperature (T = 1880 ° C) diffusion of beryllium ions on the properties of single-crystal aluminum nitride is investigated. It was shown that postgrowth doping of AlN with beryllium compensates the small silicon donor centers entering the AlN lattice in an uncontrolled manner during growth. It was established that the introduction of Be into the AlN lattice leads to a decrease in the optical absorption of the latter in the visible and ultraviolet ranges. The totality of the results is explained by a shift in the position of the Fermi level, caused by the introduction of the acceptor impurity of beryllium, towards the ceiling of the AlN valence band.


2021 ◽  
Vol 808 ◽  
pp. 140870
Author(s):  
Huajin Yan ◽  
Sugui Tian ◽  
Guoqi Zhao ◽  
Ning Tian ◽  
Shunke Zhang

2021 ◽  
Vol 118 (18) ◽  
pp. 183502
Author(s):  
Howuk Kim ◽  
Kyunghoon Kim ◽  
Nicholas Garcia ◽  
Tiegang Fang ◽  
Xiaoning Jiang

2014 ◽  
Vol 56 (3-4) ◽  
pp. 171-174
Author(s):  
V. P. Kuznetsov ◽  
V. P. Lesnikov ◽  
I. P. Konakova ◽  
N. A. Popov

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