High-temperature ionic and electronic resistivity of MgO- and Ta2O5- doped aluminum nitride

2018 ◽  
Vol 72 (1) ◽  
pp. 129-137 ◽  
Author(s):  
Dongsu Yu ◽  
Eunsil Lee ◽  
Sung-Min Lee ◽  
Jong-Young Kim ◽  
Myung Ha Park
Keyword(s):  
High Temperature ◽  
Aluminum Nitride

Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

1999 ◽  
Vol 572 ◽  
Author(s):  
C. M. Lueng ◽  
H. L. W. Chan ◽  
W. K. Fong ◽  
C. Surya ◽  
C. L. Choy
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Composite Film ◽  
High Frequency ◽  
Molecular Beam ◽  
Silicon Substrates ◽  
Heterodyne Interferometer

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

Aluminum Nitride Micro-Channels Grown via Metal Organic Vapor Phase Epitaxy for MEMs Applications

2007 ◽  
Vol 1040 ◽  
Author(s):  
L. E. Rodak ◽  
Sridhar Kuchibhatla ◽  
P. Famouri ◽  
Ting Liu ◽  
D. Korakakis
Keyword(s):  
High Temperature ◽  
Aluminum Nitride ◽  
Silicon Dioxide ◽  
Vapor Phase ◽  
High Energy ◽  
Vapor Phase Epitaxy ◽  
Micro Channel ◽  
Organic Vapor ◽  
Micro Channels ◽  
Metal Organic

AbstractAluminum nitride (AlN) is a promising material for a number of applications due to its temperature and chemical stability. Furthermore, AlN maintains its piezoelectric properties at higher temperatures than more commonly used materials, such as Lead Zirconate Titanate (PZT) [1, 2], making AlN attractive for high temperature micro and nano-electromechanical (MEMs and NEMs) applications including, but not limited to, high temperature sensors and actuators, micro- channels for fuel cell applications, and micromechanical resonators.This work presents a novel AlN micro-channel fabrication technique using Metal Organic Vapor Phase Epitaxy (MOVPE). AlN easily nucleates on dielectric surfaces due to the large sticking coefficient and short diffusion length of the aluminum species resulting in a high quality polycrystalline growth on typical mask materials, such as silicon dioxide and silicon nitride [3,4]. The fabrication process introduced involves partially masking a substrate with a silicon dioxide striped pattern and then growing AlN via MOVPE simultaneously on the dielectric mask and exposed substrate. A buffered oxide etch is then used to remove the underlying silicon dioxide and leave a free standing AlN micro-channel. The width of the channel has been varied from 5 ìm to 110 ìm and the height of the air gap from 130 nm to 800 nm indicating the stability of the structure. Furthermore, this versatile process has been performed on (111) silicon, c-plane sapphire, and gallium nitride epilayers on sapphire substrates. Reflection High Energy Electron Diffraction (RHEED), Atomic Force Microscopy (AFM), and Raman measurements have been taken on channels grown on each substrate and indicate that the substrate is influencing the growth of the AlN micro-channels on the SiO2 sacrificial layer.

Thermally compensated aluminum nitride Lamb wave resonators for high temperature applications

2010 ◽  
Vol 97 (8) ◽  
pp. 083501 ◽  
Author(s):  
Chih-Ming Lin ◽  
Ting-Ta Yen ◽  
Valery V. Felmetsger ◽  
Matthew A. Hopcroft ◽  
Jan H. Kuypers ◽  
...  
Keyword(s):  
High Temperature ◽  
Aluminum Nitride ◽  
Lamb Wave ◽  
Temperature Applications

Raman analysis of aluminum nitride at high temperature

2006 ◽  
Vol 57 (2) ◽  
pp. 105-110 ◽  
Author(s):  
Xiaojun Li ◽  
Candong Zhou ◽  
Guochang Jiang ◽  
Jinglin You
Keyword(s):  
High Temperature ◽  
Aluminum Nitride ◽  
Raman Analysis

High temperature chemical vapor deposition of aluminum nitride, growth and evaluation

2013 ◽  
Vol 230 ◽  
pp. 111-118 ◽  
Author(s):  
M. Pons ◽  
R. Boichot ◽  
N. Coudurier ◽  
A. Claudel ◽  
E. Blanquet ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Aluminum Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor
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