Semi‐insulating properties of Fe‐implanted InP. II. Deep levels of Fe from the study ofp+‐semi‐insulating‐n+diodes

1985 ◽  
Vol 58 (5) ◽  
pp. 1787-1797 ◽  
Author(s):  
Julian Cheng ◽  
S. R. Forrest ◽  
B. Tell ◽  
D. Wilt ◽  
B. Schwartz ◽  
...  
Keyword(s):  
Deep Levels ◽  
Insulating Properties

Compensation by deep levels in semi-insulating GaAs

1982 ◽  
Vol 60 (1) ◽  
pp. 35-40 ◽  
Author(s):  
B. A. Lombos ◽  
N. Yemenidjian ◽  
M. Averous
Keyword(s):  
Fermi Level ◽  
Multilevel Model ◽  
Deep Levels ◽  
High Resistivity ◽  
Spectrographic Analysis ◽  
Insulating Materials ◽  
Active Impurity ◽  
Source Mass ◽  
Insulating Properties

A multilevel model was developed to calculate the position of the Fermi level in GaAs. All the electrically-active impurity concentrations, indicated by spark source mass spectrographic analysis, were taken into account in the computation. The deduced semiconducting or semi-insulating properties are in agreement with the measured characteristics of the investigated crystals. It is shown that, in the case of the large gap semiconductors, only deep-lying impurity compensation results in high resistivity, semi-insulating materials.

Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

1991 ◽  
Vol 49 ◽  
pp. 900-901 ◽  
Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber
Keyword(s):  
Transport Properties ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Lattice Parameter ◽  
Crystalline Quality ◽  
Insulating Properties ◽  
Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

Insulating Composites Made from Sulfur, Canola Oil, and Wool

2020 ◽  
Author(s):  
Israa Bu Najmah ◽  
Nicholas Lundquist ◽  
Melissa K. Stanfield ◽  
Filip Stojcevski ◽  
Jonathan A. Campbell ◽  
...  
Keyword(s):  
Tensile Strength ◽  
Canola Oil ◽  
Building Blocks ◽  
Atom Economy ◽  
Flame Resistance ◽  
Sustainable Building ◽  
Second Stage ◽  
Wool Fibers ◽  
Insulating Properties ◽  
Polysulfide Polymer

An insulating composite was made from the sustainable building blocks wool, sulfur, and canola oil. In the first stage of the synthesis, inverse vulcanization was used to make a polysulfide polymer from the canola oil triglyceride and sulfur. This polymerization benefits from complete atom economy. In the second stage, the powdered polymer is mixed with wool, coating the fibers through electrostatic attraction. The polymer and wool mixture is then compressed with mild heating to provoke S-S metathesis in the polymer, which locks the wool in the polymer matrix. The wool fibers impart tensile strength, insulating properties, and flame resistance to the composite. All building blocks are sustainable or derived from waste and the composite is a promising lead on next-generation insulation for energy conservation.

EXPERIMENTAL VERIFICATION OF DLTS MODELS

2019 ◽  
Author(s):  
Nataliya Mitina ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Data Processing ◽  
Experimental Verification ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

DEEP LEVELS' ACTIVATION ENERGY DEPENDENCE ON MEASUREMENT MODES

2019 ◽  
Author(s):  
Aleksey Bogachev ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Energy Dependence ◽  
Deep Level ◽  
Deep Levels ◽  
Blocking Voltage

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure by capacitive relaxation spectroscopy of deep levels at various values of the blocking voltage are considered.

Effect of photon irradiation on structural, dielectric, and insulating properties of Ba0.60Sr0.40TiO3 thin films

2008 ◽  
Vol 92 (21) ◽  
pp. 212906 ◽  
Author(s):  
Adrian Podpirka ◽  
M. W. Cole ◽  
Shriram Ramanathan
Keyword(s):  
Thin Films ◽  
Photon Irradiation ◽  
Insulating Properties
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