Effect of photon irradiation on structural, dielectric, and insulating properties of Ba0.60Sr0.40TiO3 thin films

2008 ◽  
Vol 92 (21) ◽  
pp. 212906 ◽  
Author(s):  
Adrian Podpirka ◽  
M. W. Cole ◽  
Shriram Ramanathan
Keyword(s):  
Thin Films ◽  
Photon Irradiation ◽  
Insulating Properties

Electrical Properties of Perovskite-Based Ferroelectric Thin Films Modified Using Rare-Earth Elements

2006 ◽  
Vol 320 ◽  
pp. 49-52
Author(s):  
Hiroshi Uchida ◽  
Hiroshi Nakaki ◽  
Hiroshi Funakubo ◽  
Seiichiro Koda
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Electrical Properties ◽  
Lead Zirconate Titanate ◽  
Remanent Polarization ◽  
Lead Zirconate ◽  
Solution Deposition ◽  
Si Substrates ◽  
Crystal Anisotropy ◽  
Insulating Properties

The electrical properties of perovskite-based ferroelectric films were improved by ion modification using rare-earth cations. Thin films of rare-earth-modified lead zirconate titanate [Pb(Zr,Ti)O3] were fabricated on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition technique. The substitution of volatile cations in the simple-perovskite oxides, such as Pb2+ in Pb(Zr,Ti)O3 films, enhanced the insulating properties of the film. The crystal anisotropy of the Pb(Zr,Ti)O3 film could be controlled by varying the species and the amount of replacing cations to enhance the spontaneous polarization. Thus, ion modification using Dy3+ cation could enhance the remanent polarization of Pb(Zr,Ti)O3 film consequently.

Al Doped Ta2O5 Thin Films for Microelectronic Applications

2000 ◽  
Vol 654 ◽  
Author(s):  
P. C Joshi ◽  
M. W. Cole ◽  
C. W. Hubbard ◽  
E. Ngo
Keyword(s):  
Thin Films ◽  
Precursor Solution ◽  
Electrical Measurements ◽  
Cross Sectional ◽  
Solution Deposition ◽  
Atomic Force ◽  
The Stability ◽  
Insulating Properties ◽  
Post Deposition

AbstractIn this paper, we report on the fabrication and characterization of pure and Al doped Ta2O5 thin films fabricated by metalorganic solution deposition (MOSD) technique. The pure and Aldoped Ta2O5 thin films were fabricated by spin-coating technique using room temperature processed carboxylate-alkoxide precursor solution. The structure of the films was analyzed by xray diffraction (XRD). The surface and cross-sectional morphology of the films were examined by field emission scanning electron microscope (FESEM) and atomic force microscope (AFM). The electrical measurements were conducted on films in MIM configuration using Pt as the top and bottom electrode. The effects of Al concentration and the post-deposition annealing temperature on the structural, dielectric, and insulating properties were analyzed. The effects of the applied bias and the measurement temperature on the dielectric and insulating properties were also analyzed to establish the stability and reliability of Al doped Ta2O5 thin films.

Improvement in the adhesion of thin films to semiconductors and oxides using electron and photon irradiation

1985 ◽  
Vol 22-23 ◽  
pp. 1034-1041 ◽  
Author(s):  
J. Gazecki ◽  
G.A. Sai-Halasz ◽  
R.G. Elliman ◽  
A. Kellock ◽  
G.L. Nyberg ◽  
...  
Keyword(s):  
Thin Films ◽  
Photon Irradiation ◽  
Electron And Photon

EFFECT OF Ce-DOPING ON STRUCTURAL AND ELECTRICAL PROPERTIES OF DIELECTRIC Bi2Ti2O7 THIN FILMS

2008 ◽  
Vol 15 (06) ◽  
pp. 799-803 ◽  
Author(s):  
XIANGYANG JING ◽  
BAIBIAO HUANG ◽  
SHUSHAN YAO ◽  
QI ZHANG ◽  
ZEYAN WANG ◽  
...  
Keyword(s):  
Thin Films ◽  
Dissipation Factor ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Si Substrates ◽  
Chemical Solution Deposition Method ◽  
Structural And Electrical Properties ◽  
Ce Substitution ◽  
P Type ◽  
Insulating Properties

Ce -doped Bi 2 Ti 2 O 7 thin films have been successfully prepared on P-type Si substrates by a chemical solution deposition method. The structural properties of the films were studied by X-ray diffraction. The phase of Ce -doped Bi 2 Ti 2 O 7 was more stable than that of Bi 2 Ti 2 O 7 without Ce substitution. The films exhibited good insulating properties at room temperature. The dielectric constant of the films annealed at 700°C at 100 kHz was 168 and the dissipation factor was 0.038. All these results showed that Ce -doped Bi 2 Ti 2 O 7 thin films could be used as storage capacitors in DRAM and MOS.

Modeling Nucleation and Insulating Properties of Oxide Surfaces and Ultra-Thin Films

2004 ◽  
Vol 264-268 ◽  
pp. 485-488 ◽  
Author(s):  
S. Schintke ◽  
M. Stengel ◽  
L.C. Ciacchi ◽  
Wolf-Dieter Schneider ◽  
M. Svetina ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxide Surfaces ◽  
Insulating Properties

Solution synthesis and dielectric properties of alumina thin films: understanding the role of the organic additive in film formation

2021 ◽  
Author(s):  
Rudolf C. Hoffmann ◽  
Maciej O. Liedke ◽  
Maik Butterling ◽  
Andreas Wagner ◽  
Vanessa Trouillet ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Film Formation ◽  
Positron Annihilation Spectroscopy ◽  
Organic Additive ◽  
Size Distributions ◽  
Solution Synthesis ◽  
Pore Size Distributions ◽  
Insulating Properties

Positron annihilation spectroscopy is used to characterize pore size distributions in alumina thin films. Differences in the microstructure can be correlated to dielectric behaviour and insulating properties.

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