High-performance CF4 plasma treated polycrystalline silicon thin-film transistors using a high-k Tb2O3 gate dielectric

Tung-Ming Pan; Zhi-Hong Li

doi:10.1063/1.3357428

High-performance CF4 plasma treated polycrystalline silicon thin-film transistors using a high-k Tb2O3 gate dielectric

Applied Physics Letters ◽

10.1063/1.3357428 ◽

2010 ◽

Vol 96 (11) ◽

pp. 113504 ◽

Cited By ~ 7

Author(s):

Tung-Ming Pan ◽

Zhi-Hong Li

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Gate Dielectric ◽

Silicon Thin Film ◽

High K

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High-performance polycrystalline silicon thin-film transistors integrating sputtered aluminum-oxide gate dielectric with bridged-grain active channel

Semiconductor Science and Technology ◽

10.1088/0268-1242/28/11/115003 ◽

2013 ◽

Vol 28 (11) ◽

pp. 115003 ◽

Cited By ~ 7

Author(s):

Meng Zhang ◽

Wei Zhou ◽

Rongsheng Chen ◽

Man Wong ◽

Hoi-Sing Kwok

Keyword(s):

Thin Film ◽

Aluminum Oxide ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Gate Dielectric ◽

Silicon Thin Film ◽

Active Channel

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High-performance polycrystalline silicon thin-film transistors with oxide–nitride–oxide gate dielectric and multiple nanowire channels

Thin Solid Films ◽

10.1016/j.tsf.2006.07.093 ◽

2006 ◽

Vol 515 (3) ◽

pp. 1112-1116

Author(s):

Shih-Ching Chen ◽

Ting-Chang Chang ◽

Po-Tsun Liu ◽

Y.C. Wu ◽

C.C. Tsai ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Gate Dielectric ◽

Silicon Thin Film ◽

Nitride Oxide

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Four-Terminal Polycrystalline-Silicon Thin-Film Transistors with High-k HfO2 Dielectric on Glass Substrate

2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) ◽

10.23919/am-fpd52126.2021.9499186 ◽

2021 ◽

Author(s):

Kenta Kudo ◽

Jyunki Kimura ◽

Takumi Suzuki ◽

Naoki Nishiguchi ◽

Akito Hara

Keyword(s):

Thin Film ◽

Glass Substrate ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Silicon Thin Film ◽

High K

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High-performance polycrystalline silicon thin-film transistors prepared via the laser crystallization of the prepatterned channel layer on the bottom-gate structure

Thin Solid Films ◽

10.1016/j.tsf.2012.09.048 ◽

2013 ◽

Vol 529 ◽

pp. 421-425 ◽

Cited By ~ 4

Author(s):

Chao-Lung Wang ◽

I-Che Lee ◽

Chun-Yu Wu ◽

Yu-Ting Cheng ◽

Po-Yu Yang ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Laser Crystallization ◽

Silicon Thin Film ◽

Channel Layer ◽

Gate Structure ◽

Bottom Gate

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High-performance vertically stacked bottom-gate and top-gate polycrystalline silicon thin-film transistors for three-dimensional integrated circuits

Solid-State Electronics ◽

10.1016/j.sse.2012.05.016 ◽

2012 ◽

Vol 77 ◽

pp. 26-30 ◽

Cited By ~ 3

Author(s):

I-Che Lee ◽

Tsung-Che Tsai ◽

Chun-Chien Tsai ◽

Po-Yu Yang ◽

Chao-Lung Wang ◽

...

Keyword(s):

Thin Film ◽

Integrated Circuits ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Three Dimensional ◽

Silicon Thin Film ◽

Bottom Gate

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Characterization of Polycrystalline Silicon Thin-Film Transistors with Nickel-Titanium Oxide Gate Dielectric Coating by Sol-Gel Method

10.7567/ssdm.2009.p-9-2 ◽

2009 ◽

Cited By ~ 1

Author(s):

S. C. Wu ◽

R. C. Yen ◽

C. K. Deng ◽

T. S. Chao ◽

S. H. Chuang ◽

...

Keyword(s):

Thin Film ◽

Titanium Oxide ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Gate Dielectric ◽

Sol Gel ◽

Nickel Titanium ◽

Silicon Thin Film ◽

Gel Method

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SiO2formation by thermal evaporation of SiO in oxygen atmosphere used to fabrication of high performance polycrystalline silicon thin film transistors

Applied Physics Letters ◽

10.1063/1.110956 ◽

1994 ◽

Vol 64 (8) ◽

pp. 1018-1020 ◽

Cited By ~ 32

Author(s):

T. Sameshima ◽

A. Kohno ◽

M. Sekiya ◽

M. Hara ◽

N. Sano

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Thermal Evaporation ◽

Oxygen Atmosphere ◽

Silicon Thin Film

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Development of high-performance polycrystalline silicon thin-film transistors (TFTs) using defect control process technologies

IEEE Electron Device Letters ◽

10.1109/led.2002.1015218 ◽

2002 ◽

Vol 23 (7) ◽

pp. 407-409 ◽

Cited By ~ 6

Author(s):

S. Higashi ◽

D. Abe ◽

Y. Hiroshima ◽

K. Miyashita ◽

T. Kawamura ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Control Process ◽

Silicon Thin Film ◽

Defect Control

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High-Performance Polycrystalline Silicon Thin Film Transistors on Non-Alkali Glass Produced Using Continuous Wave Laser Lateral Crystallization

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.l311 ◽

2002 ◽

Vol 41 (Part 2, No. 3B) ◽

pp. L311-L313 ◽

Cited By ~ 86

Author(s):

Akito Hara ◽

Fumiyo Takeuchi ◽

Michiko Takei ◽

Katsuyuki Suga ◽

Kenichi Yoshino ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Silicon Thin Film ◽

Alkali Glass ◽

Wave Laser ◽

Lateral Crystallization

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High-Performance Excimer-Laser-Crystallized Polycrystalline Silicon Thin-Film Transistors with the Pre-Patterned Recessed Channel

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.066502 ◽

2012 ◽

Vol 51 ◽

pp. 066502

Author(s):

Chao-Lung Wang ◽

Huang-Chung Cheng ◽

I-Che Lee ◽

Chun-Yu Wu ◽

Yu-Ting Cheng ◽

...

Keyword(s):

Thin Film ◽

Excimer Laser ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Silicon Thin Film ◽

Recessed Channel

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