Comparison of the structure and electrical properties of thin tungsten films deposited by radio frequency sputtering and ion beam sputtering

1985 ◽  
Vol 58 (9) ◽  
pp. 3583-3589 ◽  
Author(s):  
R. Murray
Keyword(s):  
Electrical Properties ◽  
Radio Frequency ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Radio Frequency Sputtering ◽  
Beam Sputtering

Effect of Thermal Annealing on Electrical Properties of Si-LiNbO3

2011 ◽  
Vol 700 ◽  
pp. 53-57 ◽  
Author(s):  
Valentin M. Ievlev ◽  
Maxim P. Sumets ◽  
Alexander V. Kostyuchenko
Keyword(s):  
Electrical Properties ◽  
Radio Frequency ◽  
Thermal Annealing ◽  
Conduction Mechanism ◽  
Ion Beam ◽  
Radio Frequency Magnetron ◽  
Ion Beam Sputtering ◽  
Charge Localization ◽  
Jump Distance ◽  
Beam Sputtering

The substructure and electrical properties of the films with the thickness up to 2.0 µm deposited on Si by the methods of the radio frequency magnetron and ion-beam sputtering of a LiNbO3 target have been investigated. It has been established that in thermally annealed samples an activated conduction mechanism with variable jump distance takes place. As a result of thermal annealing a decrease in the charge localization centers (CLC) in the LiNbO3 films from Nt=3·1018cm-3 to Nt=3·1016cm-3 occurs.

Residual stress of graded-index-like films deposited by radio frequency ion-beam sputtering

2009 ◽  
Vol 517 (5) ◽  
pp. 1746-1749 ◽  
Author(s):  
Chien-Jen Tang ◽  
Cheng-Chung Jaing ◽  
Kai Wu ◽  
Cheng-Chung Lee
Keyword(s):  
Residual Stress ◽  
Radio Frequency ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Graded Index ◽  
Beam Sputtering

Electrical Properties of Oxygenated Amorphous Si Prepared by Ion-Beam Sputtering

1979 ◽  
Vol 18 (7) ◽  
pp. 1395-1396 ◽  
Author(s):  
Kiyoshi Ishii ◽  
Masahiko Naoe ◽  
Shun'ichi Yamanaka ◽  
Shuichi Okano ◽  
Masakuni Suzuki
Keyword(s):  
Electrical Properties ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Amorphous Si
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