Tunable tunneling magnetoresistance in a ferromagnet-metal-insulator-ferromagnet tunneling junction

2010 ◽  
Vol 107 (9) ◽  
pp. 09C716 ◽  
Author(s):  
Sui-Pin Chen
Keyword(s):  
Tunneling Magnetoresistance ◽  
Tunneling Junction ◽  
Metal Insulator

Tunnel Type Magnetoresistance in Electron Beam Deposited Films of Compositions (Co0.5Fe0.5)x(Al2O3)(100-x) (7 ≤ x ≤ 52)

1999 ◽  
Vol 602 ◽  
Author(s):  
H.R. Khan ◽  
A. Ya Vovk ◽  
A.F. Kravets ◽  
O.V. Shipil ◽  
A.N. Pogoriliy
Keyword(s):  
Electron Beam ◽  
Room Temperature ◽  
Electron Beam Evaporation ◽  
Tunneling Magnetoresistance ◽  
Metal Insulator ◽  
Glass Substrates ◽  
Electron Beam Evaporation Technique ◽  
Crystallite Sizes ◽  
Evaporation Technique ◽  
Deposited Films

AbstractA series of 400 nm thick metal-insulator films of compositions (Co50Fe50)x(Al2O3(100-x) (7 ≤ x ≤ 52; x is in vol.%) are deposited on glass substrates using dual electron beam evaporation technique. The films are nanocrystalline with crystallite sizes of 1-3 nm. Resistivity of the films varies as a function of (I/T)0.5 showing a tunneling type behaviour. The films show isotropic and negative magnetoresistance (GMR). A film of composition (Co50Fe50)82.5(Al2O3)17.5 show maximum tunneling magnetoresistance (TMR) of 7.2% at room temperature and in a magnetic field of 8.2 kOe.

Electrical Conductivity and Low-Field Magnetoresistance in La2/3(Ca0.60Ba0.40)1/3Mn1-xVxO3 Prepared by Sol-Gol

2007 ◽  
Vol 121-123 ◽  
pp. 901-904
Author(s):  
Hong Zhang ◽  
Shui Yuan Chen ◽  
Su Zhen Tang ◽  
Wen Pao Ke ◽  
Heng Lai ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Sol Gel ◽  
Experimental Results ◽  
Tunneling Magnetoresistance ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Low Field ◽  
Substitution Ratio ◽  
Curie Temperature Tc ◽  
Evident Difference

La2/3(Ca0.6Ba0.4)1/3Mn1-xVxO3 (x=0, 0.03, 0.05, 0.07, 0.10, 0.15, 0.20) nanoparticles were synthesized using sol-gel technology. The experimental results reveal that, (1) the substitution of V for Mn in La2/3(Ca0.6Ba0.4)1/3Mn1-xVxO3 lowers the Curie temperature TC and the metal–insulator transition temperature TMI; (2) there exists the evident difference between the TC and the TMI for different V substitution ratio; (3) the low-temperature tunneling magnetoresistance and maximum magnetoresistance near Tc increase with the enhancement of V-doping content. Based on the tunneling magnetoresistance model and the percolation model near Curie temperature, the experimental results are explained well.

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