Electron traps with similar concentrations inn‐type Al0.1Ga0.9As grown by metalorganic chemical vapor deposition

1985 ◽  
Vol 58 (1) ◽  
pp. 337-340 ◽  
Author(s):  
Masamichi Sakamoto ◽  
Tsunekazu Okada ◽  
Yoshifumi Mori
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Electron Traps ◽  
Metalorganic Chemical

Deep electron traps in GaAs layers grown on (100)Si substrates by metalorganic chemical vapor deposition

1990 ◽  
Vol 67 (5) ◽  
pp. 2454-2456 ◽  
Author(s):  
Eun Kyu Kim ◽  
Hoon Young Cho ◽  
Yong Kim ◽  
Moo Sung Kim ◽  
Hyeon‐Soo Kim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Electron Traps ◽  
Si Substrates ◽  
Metalorganic Chemical

Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor deposition

2016 ◽  
Vol 9 (6) ◽  
pp. 061002 ◽  
Author(s):  
In-Hwan Lee ◽  
Alexander Y. Polyakov ◽  
Nikolai B. Smirnov ◽  
Eugene B. Yakimov ◽  
Sergey A. Tarelkin ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Electron Traps ◽  
Recombination Centers ◽  
Metalorganic Chemical

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

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