Laplace deep level transient spectroscopy of electron traps in epitaxial metalorganic chemical vapor deposition grown n-GaSb

2013 ◽  
Vol 113 (2) ◽  
pp. 024505 ◽  
Author(s):  
A. Venter ◽  
J. R. Botha ◽  
V. Wagener ◽  
D. M. Murape
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deep Level Transient Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Electron Traps ◽  
Transient Spectroscopy ◽  
Metalorganic Chemical

Very Low Deep Level AlxGa1−xAs (x=0.22) Layer Grown by Metalorganic Chemical Vapor Deposition

1995 ◽  
Vol 378 ◽  
Author(s):  
Z. C. Huang ◽  
Bing Yang ◽  
H. K. Chen ◽  
J. C. Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Deep Levels ◽  
Se Doping ◽  
Transient Spectroscopy ◽  
Low Selenium ◽  
Metalorganic Chemical

ABSTRACTWe have achieved deep-level-free Al0.22Ga0.78As epitaxial layers using low selenium (Se)-doping (8.4 × l016 cm−3) grown by metalorganic chemical vapor deposition (MOCVD). Deep levels in various Al0.22Ga0.78As layers grown on GaAs substrates were measured by deep level transient spectroscopy (DLTS). We have found that the commonly observed oxygen contamination-related deep levels at EC-0.53 and 0.70 eV and germanium-related level at EC-0.30 eV in MOCVD-grown Al0.22Ga0.78 As can be eliminated by low Se-doping. In addition, a deep hole level located at Ev+0.65 eV was found for the first time in highly Se-doped Al0.22Ga0.78 As epilayers. We suggest that low Se-doping (<2 × 1017 cm−3) produces a passivation effect and then deactivates other deep levels in Al0.22Ga0.78As.

Electrical Characterization of As and [As+Si] doped GaN Grown by Metalorganic Chemical Vapor Deposition

2004 ◽  
Vol 831 ◽  
Author(s):  
M. Ahoujja ◽  
S. Elhamri ◽  
R. Berney ◽  
Y.K. Yeo ◽  
R. L. Hengehold
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Si Doped ◽  
Transient Spectroscopy ◽  
Metalorganic Chemical

ABSTRACTElectrical properties of As, Si, and [As+Si] doped GaN films grown on sapphire substrates by low temperature metalorganic chemical vapor deposition have been investigated using temperature dependent Hall-effect and deep level transient spectroscopy measurements. The Hall measurements from the GaN layers show that the concentration decreases with arsine flow (4, 40, and 400 sccm) at all temperatures. The carrier concentration of the Si-doped GaN, on the other hand, increases with the incorporation of arsine flow. This behavior is attributed to the formation of AsGa antisites which act as double donors. A deep level at around 0.82 eV below the conduction in the band gap of As doped GaN is measured by DLTS and is tentatively assigned to arsenic on gallium antisite.

Properties of the EL2 Level in Organometallic Ga1−xAlxAs

1987 ◽  
Vol 104 ◽  
Author(s):  
A. Ben Cherifa ◽  
R. Azoulay ◽  
G. Guillot
Keyword(s):  
Vapor Deposition ◽  
Deep Level Transient Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Electron Trap ◽  
Quenching Effect ◽  
Deep Electron Trap ◽  
Transient Spectroscopy ◽  
First Time

ABSTRACTWe have studied by means of deep level transient spectroscopy and photocapacitance measurements deep electron traps in undoped Ga1−xAlxAs of n-type grown by metalorganic chemical vapor deposition with 0≤x≤ 0.3. A dominant deep electron trap is detected in the series of alloys. Its activation energy is found at EC-0.8 eV in GaAs and it increases with x. Its concentration is found nearly independent of x. For the first time we observed for this level in the Ga1−xAlxAs alloys, the photocapacitance quenching effect typical for the EL2 defect in GaAs thus confirming clearly that EL2 is also created in MOCVD Ga1−xAlxAs.

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