Deep electron traps in GaAs layers grown on (100)Si substrates by metalorganic chemical vapor deposition

1990 ◽  
Vol 67 (5) ◽  
pp. 2454-2456 ◽  
Author(s):  
Eun Kyu Kim ◽  
Hoon Young Cho ◽  
Yong Kim ◽  
Moo Sung Kim ◽  
Hyeon‐Soo Kim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Electron Traps ◽  
Si Substrates ◽  
Metalorganic Chemical

Processing Of PbTi03 And Pb(ZrxTi1−x)03 Thin Films By Novel Single-Solid-Source Metalorganic Chemical Vapor Deposition

1997 ◽  
Vol 474 ◽  
Author(s):  
Ping Lu ◽  
Hang Li ◽  
Shan Sun ◽  
Brace Tuttle
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Si Substrates ◽  
Process Reliability ◽  
Precursor Powders ◽  
Metalorganic Chemical

ABSTRACTFerroelectric PbTiO3(FT) and Pb(ZrxTi1−x)03 (PZT) thin films have been deposited on (100) MgO and (111) Pt/SiO2/(100)Si substrates by using a novel single-solid-source metalorganic chemical vapor deposition (MOCVD) technique. The new technique uses a powder delivery system to deliver the mixed precursor powders directly into a hot vaporizer from room temperature, therefore, avoiding any problems associated with polymerization or decomposition of the precursors before evaporation. The technique simplifies MOCVD processing significantly and can improve process reliability and reproducibility. The deposited FT and PZT films have a perovskite structure and are highly oriented with respect to the substrate. With improvement of process control, systematic studies of film evolution under various growth conditions have been carried out. Effects of substrate, substrate temperature, system vacuum, and precursor ratios in the mixture on film microstructure and properties will be presented in this paper.

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